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Faculté de Droit

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Faculté des Lettres

Faculté de l ’Ingénieur

Faculté de Médecine

Faculté de l ’Ingénieur (Annexe )

Faculté des Sciences Economiques

Rectorat

Centre de recherche

Faculté des Sciences

Faculté Des Sciences

Faculté

de Droit

Direction

Centre ville

Oued Makkera


Faculté

de Droit

Direction

Centre ville

Oued Makkera

- Département de Chimie.

La Faculté des Sciences englobe :

- Département de Physique.

- Département de Maths.

- Département de Biologie.

- Département d’ Ecologie


Faculté

ds Droit

Direction

Centre ville

Oued Makkera


Faculté

de Droit

Direction

Centre ville

Oued Makkera


Faculté

de Droit

Direction

Centre ville

Oued Makkera

- Droit Privé.

La Faculté de Droit englobe :

- Droit Public.

Faculté Des Science

Faculté De l'Ingénieur

Direction

Centre ville


Faculté Des Lettres




Direction

Centre ville

Faculté Des Sciences- Département d ’ Histoire.

La Faculté des Lettres et des Sciences

Humaines englobe :

- Département de Littérature Arabe.

- Département d ’Anglais.



Direction

Centre ville





Direction

Centre ville

Faculté Des Sciences- Département d’Electrotechnique.

La Faculté de l’Ingénieur englobe :

- Département d’Electronique.

- Département de Génie Civil.

- Département de Génie Mécanique.

- Département d’Informatique (voir annexe)


Faculté De

Médecine

Centre

ville

Oued Makkera

Direction

Petit Vichy

Direction

Rectorat

Direction


Faculté De

Médecine

Centre

ville

Oued Makkera

Direction

Petit Vichy

Direction


Direction

Rectorat

Faculté De

Médecine

Centre

ville

Oued Makkera

Direction

Petit Vichy

Direction

Rectorat

Direction


Faculté De

Médecine

Centre

ville

Oued Makkera

Direction

Petit Vichy

Direction


Direction

Rectorat

- Département de Pharmacie.

La Faculté de Médecine englobe :

- Département de Médecine.

Direction

Faculté De Médecine

Oued Makkera

Rectorat

Direction


Rectorat

Oued Makkera

Direction


Oued Makkera

Rectorat

Centre de Recherche

Centre

ville

Direction

de la Faculté Des Sciences

Petit

Vichy

Annexe :

( Informatique )

Oued Makkera

Centre

ville

Direction


Petit

Vichy


Oued Makkera

Centre

ville

Direction


Petit

Vichy

Annexa :

( Informatique )



Oued Makkera

Centre

ville

Direction


Petit

Vichy

Economie

Annexe :

( Informatique )


Oued Makkera

Centre

ville

Direction


Petit

Vichy

Economie

Annexe :

( Informatique )

La Faculté de l’Ingénieur (annexe) englobe :

- Département d’Informatique

Oued Makkera

Centre

ville

Direction


Petit

Vichy

Annexe :

( Informatique )


Institut d ’informatique

Oued Makkera

Centre

ville

Direction


Petit

Vichy


Institut d ’informatique

Oued Makkera

Centre

ville

Direction


Petit

Vichy


La Faculté des Sciences Economiques englobe :

- Département des Sciences Economiques.

- Département de Gestion.

PLAY

PROGRAMME

LISTE DES PARTICIPANTS

ORGANISATEURS

SUNDAY, 24 OCTOBER 1999

16:00-20:00 Check in

20:00-21:30DINNER

21:30 SOCIAL EVENT

CINEMA

MONDAY, 25 OCTOBER 1999

08:00-09:00Registration-CRU meeting room

09:00-09:30Opening Ceremoney

09:30-10:00COFFEE BREAK


Session 1

Chairman: Pr. A. Bousetta (KLA, USA)

10:00-10:40

SYNTHESIS OF INVESTIGATIONS ON THE CHOLESTERYL ALKANOATES FAMILY BY MICRO-RAMAN SPECTROSCOPY IN THE SPECTRAL RANGE 1700-1780 cm-1

Prof. B. Khelifa (Lens, France)

10:40-11:20

LIQUID CRYSTAL, PROPERTIES AND APPLICATION IN DISPLAYTECHNOLOGIESDr. F. Bougrioua(Sint-Pietersnieuwstraat, Belgium)

11:20-11:35

THE ELECTRONIC STRUCTURE OF CuCl : LAPW CalculationM.ferhat ( U.S.T.O, Algerie)

Abstract

Abstract

Abstract


11:35-11:50

FRUSTATION DE STRUCTURE DANS DES MONOCOUCHES DE H2O, NH3,CO2,C2H2,C2H6 et CO ADSORBE SUR LA SURFACE MgO(100)Dr. M. Sidoumou (Blida, Algeria)

11:50-12:05

INFLUENCE OF THE PHOTOEXCITATION TIME ON THERMOSTIMULATEDCONDUCTIVITY SPECTRA IN HYDROGENATED AMORPHOUS SILICONDr. T. Smail (Algiers, Algeria)

12:05-12:20

EXPERIMENTAL AND NUMERICAL STUDY OF EARLY STAGE OF ISOTHERMALDECOMPOSITION OF AUSTENITE IN A NODULAR CAST IRONDr. F. Hellal (Algiers, Algeria)

12:30

LUNCH

Abstract

Abstract

Abstract

MONDAY, 25 OCTOBER 1999 Session 2

Chairman: Pr. A. Rais (Al-khoud, Sultanate of Oman)

14:00-14:40

EFFECTS OF OPTICAL THERMAL PROCESSINGS ON ELECTRICAL PROPERTIES OF SILICON CRYSTALSProf. A. Barhdadi(Rabat, Morocco)

14:40-14:55

PHOTOSENSITIVITY AND ISOMERISATION PROCESSES OF VINYL CINNAMATESProf.A. Krallafa (Oran, Algeria)

14:55-15:10

SPECTROSCOPIC INVESTIGATIONS OF INFRARED LASER MATERIALSProf. M. Diaf(Annaba, Algeria)

15:10-16:30

16:30-17:00 COFFEE BREAK

Abstract

Abstract

Abstract

POSTER SESSION A


Session 3

Chairman: Prof. B. Benyoucef (University of Tlemcenm)

17:00-17:15

THREE DIMENSIONAL MODELISATION OF THE PL INTENSITYPHOTOLUMINESCENCE (IPL) IN SILICON-ON-INSULATOR (SOI) STRUCTURESDr. T. Benbakhti (Sidi-Bel-Abbès, Algeria)

17:15-17:30

Si-H THIN FILMS TRANSISTORDr. M-F. Mosbah (Constantine, Algeria)

17:30-17:45

GENERAL RELATIONS BETWEEN REFRACTIVE INDEX AND ENERGY GAP OF SEMICONDUCTORSDr. S. Zellag (Bejaia, Algeria)

Abstract

Abstract

Abstract


17:45-18:00

ETUDE DE L'ORDRE LOCAL PAR EXAFS DE TRANSMISSION DANS LES MATERIAUX DU SYSTEME GeTeSbDr. Z. Bouchaour (Oran, Algeria)

18:00-18:15

CORROSION AND WEAR RESISTANCE OF VERMICULLAR (FGV) AND NODULLARGRAPHITE (FGS) CAST IRONDr. A. Roula (Jijel, Algeria)

19:00-20:00 Reception at the City Hall of Sidi Bel Abbes

20:00-21:30 DINNER

21:30SOCIAL EVENT

THEATRE

Abstract

Abstract

TUESDAY, 26 OCTOBER 1999

Session 4

Chairman: Dr. N. Amrane (Sidi Bel Abbes, Algeria)

09:00-09:40

THE EFFECT OF RADIATION ON II-VI COMPOUND MATERIALS FOR SOLAR CELLS APPLICATIONPr. A. M. Al-Dhafiri (Riyad, Saudia Arabia)

09:40-10:20

SURFACE PLASMONS FOR PROBING OPTICAL DATA OF MULTi-LAYERED THIN FILMSPr. A. Rais (Al-khoud, Sultanate of Oman)


Abstract

Abstract


Session 5

Chairman: Pr.B. Khelifa (Lens, France)

10:50-11:05

THERMOELECTRIC PROPERTIES OF SINGLE CRYSTAL ALLOYS (Bi2Te3)90(Bi2Se3)10 DOPED WITH BROMIDE, GROWN BY THE BRIDGMAN METHODDr. M. Chitroub (Algiers, Algeria)

11:05-11:20

ATOMISTIC SIMULATION OF THE STRUCTURAL, ELASTIC ANDTHERMODYNAMIC PROPERTIES OF CdTe AND ZnTeDr. G. Merad (Tlemcen, Algeria)

11:20-11:35

FIRST-PRINCIPLES DETERMINATION OF Au-Ni PHASE DIAGRAMProf. R. Halimi (Constantine, Algeria)

Abstract

Abstract

Abstract


11:35-11:50

STUDY BY CHANNELLING AND X-RAY DIFFRACTION OF HEAVY ANTIMONY DOPED SILICON BY ION IMPLATATION AND THERMAL ANNEALINGProf. C. Benazzouz (Algiers, Algeria)

11:50-12:05

HYDRODYNAMIC EFFECT OF RECTILING DISC ELECTRODEDr. D. Abdi (Setif, Algeria)

12:05-12:20

MECANISME D'ADHERENCE A L'EFFET SOLIDE DES LIAISONSCERAMIQUE-METAL: CAS DU COUPLE ARGENT-ALUMINEA. Sérier} (Sidi Bel Abbès, Algeria)

12:30 LUNCH

Abstract

Abstract

Abstract


Session 6

Chairman: Prof. A. Bouabdellaha (USTHB)

14:00-14:40

COPPER AND LOW DIELECTRIC TECHNOLOGIESProf. A. Bousetta (California, USA)

14:40-15:30


Abstract

POSTER SESSION B


Session 7

Chairman: Prof. A. M. Al-Dhafiri (Riyad, Saudia Arabia)

16:00-16:15

STUDY OF MESA 6H-SiC HIGH VOLTAGE RECTIFIERDr. K. Gaffour (Tlemcen, Algeria)

16:15-16:30

CARACTRISATION EN FONCTION DE LA FREQUENCE DES DIODES SCHOTTKY Au/InSb/InP(100)Dr. Z. Benamara (Sidi Bel Abbes, Algeria)

16:30-16:45

EFFET DE LA TAILLE DU GRAIN AUSTENITIQUE SUR LE DURCISSEMENT PAR ECROUISSAGE DES ACIERS INOXYDABLES AUSTENITIQUES 304,316Dr. R. Badji (Blida, Algeria)

Abstract

Abstract

Abstract


16:45-17:00

EFFECT OF ERBIUM INCORPORATION ON PROPERTIES OF DC SPUTTERED HYDROGENATED AMORPHOUS SILICON FILMS}Dr. M. Kechouane (Algiers, Algeria)

17:00-17:15

ELECTRICAL AND MAGNETIC COUPLING IN CERAMIC SUPRACONDUCTOR}Dr. A. Khalfi} (Sidi Bel Abbes, Algeria)

20:00-21:30 DINNER

21:30 SOCIAL EVENT

TRADITIONAL MUSIC

Abstract

Abstract

WEDNESDAY, 27 OCTOBER 1999

Session 8

Chairman: Prof. A. Barhdadi (Rabat, Morocco)

09:00-09:40

A MONTE CARLO SIMULATION OF MAGNETIC TRANSITIONS INFERROMAGNETIC MATERIALSProf. A. Belaidi (Oran, Algeria)

09:40-10:20

ELECTRICAL CHARACTERISTICS OF n-TYPE GaN GROWN BY LP-MOVPEDr. Z. Bougrioua (Sint-Pietersnieuwstraat,Belgium)


10:50-11:05

OPTIMIZED AL0.1Ga0.9As SOLAR CELLS WITH JSC=25.076mA/cm2 AND AM1.5G=24.74%Prof. M. Remram }(Constantine, Algeria)

Abstract

Abstract

Abstract

WEDNESDAY, 27 OCTOBER 1999

11:05-11:20

CARACTRISATION STRUCTURALE ET ELECTRIQUE DES COUCHES MINCES DE BI2S3 PERPARES PAR LA TECHNIQUE SPRAY PYROLYSISDr. N. Benramdane (Sidi Bel Abbes, Algeria)

11:20-11:35

THE USE OF POROUS SILICON IN PHOTOVOLTAIC APPLICATIONSDr. N.E. Chaabane Sari (Tlemcen, Algeria)

11:35-11:50

STATE OF THE ART OF SEMICONDUCTOR DETECTORSDr. T. Hadjersi (Algiers, Algeria)

11:50-12:05

LES FIBRES DE VERRE PARTICLARITES TECHNOLOGIQUES ET CONCEPTUELLES DES ENGINS MARINSDr. M. Khalladi (DRD-CFN, Algeria)

12:30 LUNCH

Abstract

Abstract

Abstract

Abstract

WEDNESDAY, 27 OCTOBER 1999 Session 9

Chairman: Prof. A. Belaidi (Oran, Algeria)

14:00-14:40 CONSTRUCTION D’UNE SOLUTION POUR L’EQUATION DIFFERENTIELLE DE PAINLEVEProf. A. Bouabdellah (USTHB, Algeria)

14:40-15:20 III-N MATERIALS FOR MICROSENSORS APPLICATIONS Prof. A. Bensaoula (SVEC-NASA, USA)

15:30-16:00 CLOSING CEREMONY

16:00 SIDI BEL ABBES SIGHTSEEING

20:00-21:30 DINNER

21:30 SOCIAL EVENT

CINEMA

Abstract

Abstract

Synthesis of investigations on the cholesteryl alkanoates family by Micro-Raman spectroscopy

in the spectral range 1700 - 1780 cm-1

S. Bresson1, F. Hamza Reguig2, A. Krallafa2 and B. Khelifa1

Monday, 25 October10:00 - 10:40

Abstract :

Structural properties of the cholesteryl alkanoates family are investigated by Micro-Raman spectroscopy. In this work, we present Micro-Raman spectroscopy studies of the C=O stretching mode for 11 cholesteryl alkanoates with an alkyl chain length n increasing from 2 to 22 in crystalline, istropic liquid and crystal liquid phases. For the cholesteryl alkanoates having a " real " alkyl chain (n > 2), our Micro-Raman spectroscopic results and the X-ray investigations are in good agreement. For n = 2, our interpretation of the structural organization is compared with some semi empirical quantum calculations and with X-ray experiments. So as to explain the difference between our Micro-Raman investigations and the X-ray results for n = 2, we have exhibited an hypothesis.

Liquid Crystal, properties and application in display technologies

Fatiha Bougrioua


Abstract

Liquid crystals constitute the fourth state of matter in between liquid and solid states. They exhibit in the same time mechanical properties typical of liquid state (like fluidity and surface tension) and optical properties typical of crystalline state (like optical anisotropy andstructural order).My discussion will be focused on the thermotropic liquid crystals resulting from compounds with elongated molecules. These phases are classified following the structural distribution of their molecules (molecular order) and their optical properties (birefringence). Decreasing the temperature from the isotropic state, the nematics (N) appear to be followed by different kinds of smectics. Adding a chiral atom to the molecules, it's possible to get twisted structures : the cholesterics (N*), and the ferroelectric twisted smectic (Sc*).Nematic phases with a planar orientation have the same behaviour as an uniaxial crystal with a much higher birefringence. Moreover, the use of an electric field leads to the reorientation of the molecules and the modification of their anisotropic optical properties. The polarisation ofincident light is th en influenced permitting display applications. My presentation will give an

overview of these applications including passive matrix displays (PMDs) and active matrix displays (AMDs).To optimize the use of LCD's, it's important to have very pure compounds. Nevertheless, a lot of ionimpurities are introduced during the processing or operating leading to the deterioration of the optical behaviour of the display. The last part of my presentation will stress on the technologies developed in our laboratory (ELIS , Gent) permitting the study of the ions behaviour and the measurement of ther concentrations and mobilities in prototype samples.

FRUSTATION DE STRUCTURE DANS DES MONOCOUCHES DE H2O, NH3, CO2, C2H2, C2H6 et CO ADSORBE SUR LA SURFACE MgO (100).

M. Sidoumou, S. Bourahla and F. Bouamara


Abstract:

²Le but de ce travail est de montrer la perturbation apportée par une surface d’oxyde de magnésium Mg(100) à l’arrangement de molécules étrangères qui y sont adsorbées. On commencera le résultat de la compétition, parfois subtile entre les interactions adsorbat-adsorbat et adsorbat-substrat. On montrera qu’en fait, cette compétition fait apparaître des structures plus ou moins frustrées ayant des relations d’épitaxie bien ou mal définies selon le cas.Nous illustrerons ce comportement grâce à l’étude par diffraction d’électrons lents des molécules H2O, NH3, CO2, C2H2, C2H6 et CO adsorbés sur la surface MgO(100) clivé in-situ. Sur cette surface, la symétrie carrée des sites d’adsorption, la nature (partiellement) ionique des liaisons Mgx+ Ox- (x<2) et la présence (éventuelle de moments multipolaires dans les molécules adsorbées mettent bien en valeur, dans une gamme étendue d'effets, ces phénomènes de frustration de structure.

Influence of the photoexcitation Time on ThermostimulatedConductivity Spectra in Hydrogenated Amorphous Silicon

T.Smail* , M.Aoucher*, T.Mohammed-Brahim**

* Laboratoire des Couches Minces et des Semi-conducteursInstitut de Physique, USTHB,BP32, 16111 Bab-Azzouar, El-Alia, Alger, Algeria** GMV,Université de Rennes1, Campus de Beaulieu 11B,35042 Rennes Cedex, France


Abstract:

The interpretation and exploitation of the experimental thermally stimulated conductivity (TSC) spectra in hydrogenated amorphous and photoexcitation time in a-Si:H is presented.A numerical simulation based on the Shockley-Read-Hall statistics of both electrons and holes is presented. The standard distribution of localised states in a-Si:H is assumed, i.e. exponential conduction and valence band tails and the dangling-bond correlated defect states. All possible thermal emission, trapping and recombination process of free carriers, occurring between extended and localised states, are considered. This model requires a resolution of a set of non-linear deferential rate of variables. The free electron, free hole and trapped charge densities are then numerically calculated by using the Newton method.For typical sets of a-Si:H microscopic parameters, the calculated TSC spectrum versus temperature show two prevalent peaks. Measurements of TSC in an undoped a-Si:H

sample show that the amplitude of the first peakdepends strongly on the exposition time te. Its amplitude decreases with te.

Experimental and Numerical study of Early Stage of IsothermalDecomposition of Austenite in a Nodular Cast Iron

1F.Hellal, 2J.Lacaze, 3A.Hazotte and 1S.Rechak


Abstract:

The initial stage of isothermal decomposition of austerite to ferrite and graphite in a spherical graphite cast iron was examined. It was investigated by diatometry metallography and image analysis. During isothermal holding at 680°C after homogenization at 900°C, it was found that a systematically contraction of the material occurs before the phase transformation starts. The occurrence of this contraction at higher holding temperatures (695°C and 750°C), where the decomposition cannot proceed, as well as its correlation to the graphite nodule count, led to the conclusion that the contraction should be related to the density change due to the compositional change of austerite, and more precisely to the transfer of carbon from supersaturated austerite to graphite. An estimate (using the thermocalc software and the SGTE database) of the volume change associated with the destruction of. austerite and with the related increase of the graphite volume fraction was performed. Calculations showed good agreement with experimental results

EFFECTS OF OPTICAL THERMAL PROCESSINGS ON ELECTRICAL PROPERTIES OF SILICON CRYSTALS

A. Barhdadi1 and J-C. Muller2

1 Laboratoire de Physique des Semiconducteurs et de l'Energie Solaire, Ecole Normale Supérieure de Takaddoum, B. P. 5118, Rabat, Morocco. 2 Centre de recherches Nucléaires (IN2P3), Laboratoire PHASE, F-67037 Strasbourg, France.


Abstract:

Optical thermal processes (OTP) can offer many advantages in a strategy focused on cost-effective techniques for the preparation of electronic devices, especially solar cells, in an automatic and continuous way. There exist several OTP which operate either in an adiabatic regime with coherent light (Lasers) or in an isothermal short duration regime with incoherent light (Rapid Isothermal Processes). These optical heating techniques are advantageous because they are fast and clean as only the sample is heated and not the reactor. Moreover, the lamp furnace annealing, which is presently as fashionable annealing mode, offers some attractive features such as low time and power consumption and hence a minimum overall thermal budget. However, despite this great interest, one of the major obstacles to the development of OTP for large practical and industrial applications is the fact that they induce an important concentration of electrically active defects in the processed samples. These defects were through to be frozen-in during

the rapid quenching procedure characterizing OTP. In this paper we report some experimental results obtained by studying the effects of Fast Isothermal Processing (FIP), carried out in the lamp furnace, on the electrical performance of silicon. The effects observed are compared to those resulting from the conventional treatments. The influence of experimental conditions of the process such as the duration, the temperature and the annealing ambient are also examined.

PHOTOSENSITIVITY AND ISOMERISATION PROCESSES OF VINYL CINNAMATES

N. Blidi Boukamel, A. Krallafa and B. KhelifaLaboratoire de Physico Chimie et Mod\'elisation, Département de Chimie, Faculté des Sciences. Université d'Oran (Es-Senia), Algérie.


Abstract:

Poly (vinilcinnamates) (PVCN) are found to be photosensitive with several isomerisation processes involved. In recent quantum calculations, energetic considerations [1] and substitution effects [2] were carried out in order to determine the general tendancy to photoisomerisation processes. In the present work a new path for the determination of isomerisation energies is proposed. With the help of this new approach, the path and mecanisms involved in such processes are investigated in full details both for the subsituted and the non substituted vinyl cinnamate. An additional hydrogen bond energy in the S-Trans-Cis configuration together with more accurate reaction paths lead to a calculated energy in bett.r agreement with the experimental isomerisation energy [3-4] (54.5Kcal/mole). The evidence of this new feature is obtained with a DFT quantum calculation and the use of 3-21G** basis set.

SPECTROSCOPIC INVESTIGATIONS OF INFRARED LASER MATERIALS

M. Diaf1, M. Mayoufi1, A. Braud2, C. Labbé2, S. Girard2, J. L. Doualan2, R. Moncorgé2 and J. Margerie2.1 Institut de physique, université d'Annaba, BP 12, Annaba 23000 (Algeria).2 CIRIL-LSA, ISMRA, 6 Bd Maréchal Juin 14050 Caen Cedex (France).


Abstract:

Solid laser materials doped with activator ions (rare earth ions or transition ions) have been the subject of intensive research for many years. These materials are characterized by their use as laser radiation propagating in the free space and are inoffensive to the human eye. The spectral emission lying in the range 1.5 m to 2 m, so-called eye-safe domain, corresponds to this type of requirements. The aim of this project, a part from military use, is range pollutant detection, fiber telecommunications, ...Among the solid laser materials doped with rare earth ions studied intensively lately, the fluoride crystals, known by their mow phonon energies and their interesting mechanical properties are distinguished. The crystal field action on the introduced earth ions is fairly low and the different electronic transition energies are in the same order of magnitude compared to that of free ions. In this way, we can obtain an approximation of the energies required for the

absorption and fluorescence spectroscopic processes. Therefore, the choice of the required rare earth is permitted.

Three dimensional modelisation of The PL Intensity Photoluminescence (IPL) in Silicon-On-Insulator (SOI) Structures

T. Benbakhti, D. Mehal, G. Bassou, A. KadounLaboratoire de Microscope Electronique, Institut d’électroniqueUniversité Djillali Liabès. B.P. 89-22000 Sidi-Bel-Abbès,AlgérieMonday, 25 October17:00 - 17:15

Abstract:

Room temperature (RT) photoluminescence (PL) depends directly on the electric properties of materials (lifetime, carriers density…). Up to now, the photoluminescence intensity has been evaluated in unidimensionnel system which is limited to describe the lateral diffusion. In this case, carriers essentially distribute in depth.For many device applications silicon-on-insulator (SOI) materials offer several advantages as compared to bulk silicon. Their technology simplifies device processing due to easier device insulation and many find many applications in fields such as very-large scale and high speed radiation hard circuits, three dimensional micro-machined structures and integrated optics. It is also gives reduced parasitic capacitance resulting in increasing speed and lower power consumption. We present examples of our calculations and experimental results and demonstrate the difference with those in three dimensional resolution, without the effect of the electric field.

General relation between refractive index and energy Gap of semiconductors.

S. Zellag1, M. Bouafia2 and A. Medjahed2..Monday, 25 October17:30 - 17:45

Abstract:

We present in this work a study on the behavior of the band gap energy of some semiconductors in dependence of the refractive index. It is demonstrated the advantage of existing relations in the study of semiconductors applied for opto-electronic devices. Using empirical formula proposed by some authors, we show by simulation the large variation of the properties as function of refractive index, and we discuss the validity conditions of the different relations.

Etude De l’Ordre local par EXAFS de Transmissiondans les Materiaux du Système GeTeSb.

Z. Bouchaour, M. Belhadji, L. Benabed, A. Abdelmoula, A. Mamoun.Institut de physique, Université d’Oran.


Abstract:

La structure locale dans les verres du système GeTeSb proche de la composition eutectique et périodique a été étudié par spectroscopie d’absorption X en se plaçant au seuil K du Germanium (Es = 11100 eV).Nos résultats montrent que l’atome excité est coordonné par quatre atomes de tellure à une distance interatomique moyenne de 2.60 A et un facteur de Debye-Waller de 0.045. Nous avons montré également que le nombre de liaisonGE-Te diminue et la distance de la liaison Ge-Te reste constante quand le pourcentage de tellure diminue, nous avons discuté ces résultats de l’EXAFS et ceux obtenues par analyse enthalpique différentielle (D. S. C) et diffraction X.

CORROSION AND WEAR RESISTANCE OF VERMICULLAR (FGV) AND NODULLAR GRAPHITE (FGS) CAST IRON

A. ROULA1, G. A. KOSNIKOV2


Abstract:

We present the results of a parametric study on the corrosion (in the nitric acid) and the wear resistance of cast irons with vermicullar (FGV) and nodullar (FGS) graphite. A similar attention has been focused on the Mn content (trying to insure the perlitisation of the metallic structure). We used this -element (in place of Sb, Sn, Ni…) because of its high concentration in Ghar Djebillet Iron ore. First, we observe that average values of these 02 working properties in FGV are situated between those recognised for cast irons with lamellar graphite (FGL) and FGS, as supposed to be by /1, 2, 3, 4/. We notice the great hardness and confirm the high wear /5/ and corrosion resistance of the perlitic FGV with a singular mathematics model.The nodullarisasation of the precipitate graphite contributes to slow the corrosion of FGV and FGS. This is clearly described by another mathematical model.

The effect of radiation on II-VI compound materials for solar cells application

Dr A. M. AL-DHAFIRI

Tuesday, 26 October09:00 - 09:40

Abstract:

CdS and CdTe single crystal was grown from vapour phase technique. While CdS was etched by laser dry etching technique (excimer laser 337 nm wave-length), CdTe was etched using photochemical method in which the sample were illuminated during the etching process. Schottky diodes were made by vacuum evaporation of gold onto both CdS and CdTe substrates. The influence of the intensity of the laser beam used during the etching processes of these substrates on the electrical properties were studied. The results show that a fundamental different change was observed on the electrical properties such as the barrier height, carrier concentration, identity factor, and forward-bias. These electrical parameters were calculated through the I-V characteristics and C-2 – V measurements of the Au-CdS and Au-CdTe. The result was presented and discussed as a function of the use of laser during the etching process.

SURFACE PLASMONS FOR PROBING OPTICAL DATA OF MULTi-LAYERED THIN FILMS

A. Sellai and A. RaisDepartment of Physics, College of Science, Sultan Qaboos University, P.O.Box 36 Al-khoud, Sultanate of Oman.Tuesday, 26 October09:40 - 10:20

Abstract:

In the present work, it is shown that optical excitation of surface plasmons (SP) can be used to obtain the optical constants and thickness of thin films in a multi-layered structure. The optimum coupling phenomenon between incoming light and SPs appears as a minimum in the reflectance. Moreover, the sensitive dependence of the reflectance minimum on the optical constants and the thickness of the metallic layer suggest that they can be determined very accurately. Indeed, by fitting the measured ATR to an analytical expression of the calculated reflectance for a limited number of layers (two and three), the optical constants and the thickness of the metal can be obtained easily. However, in the case of more than three layers system where it is difficult to derive an analytical expression, a standard matrix formalism is utilized to calculate the reflectance. This formalism is then combined to a numerical least square algorithm (Simplex) to fit the measured reflectance. The method is applied to the multi-layered system: Prism / Air gap / Oxide / Al / GaAs. The optical constants and thickness of Al as well as those of the oxide layer are taken as parameters. An excellent fit of the theoretical to the experimental reflectance is obtained.

Thermoelectric properties of single crystal alloys (Bi2Te3)90(Bi2Se3)10

doped with bromide, grown by the bridgman method

M. Chitroub and M. KerkarEcole nationale polytechnique, départementde Metallurgie El-Harrach, Alger, Algérie.


Abstract:

According to the literature, the best n-type thermoelectric materials for refrigeration at room temperature are the compounds made of Bi2Te3 and Bi2Se3 doped with an halogen. The aim of the present study has been to determine the optimal concentration of bromide for the (Bi2Te3)90(Bi2Se3)10 solid solution.The solid composition (Bi2Te3)90(Bi2Se3)10 is in thermodynamical equilibrium with the liquid (Bi2Te3)94(Bi2Se3)6 at 591°C. This composition is then chosen for the initial growth condition. Different concentration of SbBr3 : 300, 400, 600 and 1000 ppm in weight are added to the initial composition : Bi, Te and Se have a height purity (99,999) and to reduce the oxides they are melted in an H2 and He atmosphere in a quartz ampoule. Each ampoule contents 70g of this melt composition. After few hours at 650°C, the ampoule is lowered in a bridgman furnace, with a growing rate of 1 mm/h. The cleavage planes of the obtained ingots are parallel to the growth axis. Samples in the form of copper discs (15 mm

in diameter and 3mm thick) were cut perpendicularly to the same axis and soldered between two copper discs. Carrier concentration are measures by hall effect. Furthermore, the chemical composition of the samples is studies from microprobe analysis and the dopant concentration of bromide is determined from Neutron activation analysis (N.A.A).The concentration profiles of tellurium, selenium and bromide along the ingot are determined. The plots of the thermal conductivity, the electrical resistivity and the Seebeck coefficient as a function of atomic concentration of bromide are realised at room temperature. From the values of* and * we calculated the figure of merit (Z= ) and the results are reported. We obtained a maximum of Z equal to 2.55.10-3K-1 for 0.5.10es19 at.cm-3 of bromide and then Z decreases slowly to the value of 2.35.10-3K-1 for 2.5.1019at cm-

3 of bromide.The bridgman technique is very used for the growth of thermoelectric materials, because it is an easy and quick method. This growing technique applied in the case of our doped materials has for consequence an inhomogeneity of the inhomogeneity is due to the tellurium, selenium and bromide segregation. The T.H.M technique developed in our laboratory could lead us to a better control of tellurium and selenium distribution. The crystals grown by this method have a higher mobility and so we could reach higher figure of merit for a larger part of the ingot.

ATOMISTIC SIMULATION OF THE STRUCTURAL, ELASTIC AND THERMODYNAMIC PROPERTIES OF CdTe AND ZnTe.

M. B. Kanoun+, W. Sekkal++, H. Aourag ++, G. Merad+


Abstract:

The II-VI semiconductors occupy currently a privileged position in the domain of material sciences. The interest of such a domain is in large part due to the multiple applications of these compounds in different fields of investigations as the infrared, the nuclear detection and the solar cells. CdTe and ZnTe are prototype II-VI semiconductors and their cubic phase, which occurs naturally as a mineral has been called the zinc-blende structure.n the present study, we present molecular-dynamics simulation of structural , elastic and thermodynamic properties of cubic CdTe and ZnTe. The empirical Tersoff potential has been used to calculate the equilibrium properties of CdTe and ZnTe, i.e., the cohesive energy, the lattice constant, the bulk modulus and its pressure derivative. Furthermore, we

have calculated the elastic constants, the thermal expansion coefficient, the specific heat and the mode Gruneisen parameter. Inaddition, we have examined the structural phase transition from zinc-blende structure to the rock-salt structure under hydrostatic pressure. Finally, our simulation is extended to study the CdTe and ZnTe in the liquid phase. Our results exhibit an excellent agreement with the available experimental data.

STUDY BY CHANNELLING AND X-RAY DIFFRACTION OF HEAVY ANTIMONY DOPED SILICON BY ION IMPLATATION AND THERMAL

ANNEALING

C. Benazzouz, N. Boussaa, M. Zilabdi, A. Guittoum and S. BehliCommissariat à l'Energie Atomique 2 Bd. Frantz Fanon, B.P. 399 Alger Gare, Algérie Fax: 02 72 50 97


Abstract:

Electrical activation of heavily implantated Sb in Si, recrystallization of amorphous layer and complex characterization during temperature anneals are studied by ion channeling analysis, four point probe measurement and X-ray diffraction analysis. These measurements are carried out on (100) silicon wafers implanted with a dose of 1(1016 Sb+/cm-2 at 100 KeV. Following different isochronal (10 minutes) annealing steps at temperatures ranging from 350 to 900C, the antimony substitutional fraction is determined and the data compared with sheet resistivity measurements. We find that the maximum electrically activity is achieved aroud 620 C and considerable decrease in the amount of defects is observed in the lattice disorder profile.

Mécanisme d’Adhérence A l’Effect Solide Des Liaisons Ceramique-Metal : Cas Du Couple Argent-Alumine.

A. Sérier, D. Tréheux.Ecole Centrale de Lyon, Laboratoire Materiaux-Mécanique Physique, URA CNRS 44769131 Ecully Cedex, France.


Abstract:

Silver was solid – state bonded with aluminium. These materials are a priori non reactive , their thermodynamic work of adhesion is low their mosmacth in thermal expansion coefficient is very considerable . Nevertheless , we show that strong bonds can be obtained by acting not only on the solid – state – bonding conditions , but on the initial preparation of both materials too.

Copper and low dielectric technologies

Ali Bousetta


Abstract:

As we move into the deep-submicron regions (< 0.20 microns),Integrated Circuits (ICs) interconnects will have to change from thestandard Aluminum (Al), which is now used exclusively as the main interconnect material.

This paper discuss the present state of the art and future trend of ICs interconnects. The current status, challenges and opportunities of Copper (Cu) and low-k dielectric, that are poised to take over as the main on-chip interconnects, are reviewed and discussed.

The role of KLA-Tencor, in helping ICs manufacturers and foundries identify critical yield-limiting mechanism in the copper process is also discussed.

Caractérisation en Fonction de la Fréquence des Diodes Schottky Au/InSb/InP(100)

Z. Benamara*, B. Akkal*, A. Boudissa*, B. Gruzza**.*- Laboratoire de Microélectronique Appliquée- Université Djillali Liabes.**-Laboratoire des Sciences des Materiaux pour l’Electronique et d’Automatique, Université Blaise Pascal de Clermont II, Les Cézaux, 63177 Aubière Cédex, France


Abstract:

On propose dans ce travail la caractérisation de l’interface des diodes Schottky Au/InSb/InP (100) et déterminer l’effet de L’InSb est une fine couche de restructuration permettant de bloquer la migration d’Indium en surface. Les paramètres électriques caractérisant l’interface sont extrais à base des mesures des caractéristiques capacité-tension C(V) et conductances-tension G(V) en fonction de la fréquence ainsi que courant-tension I(V) en direct. La densité d’états d’interface Nss qui est de l’ordre de 9.98x1011 eV-

1 cm-2 est responsable de la non linéarité de la caractéristique I(V). Le temps de relaxation est indépendant de la tension de polarisation et l’énergie des états d’interface est varie entre 2.53x10-3 s et 6.21x10-3 s.

Effet de La Taille du Grain Austenitique sur le Durcissement par Ecrouissage des Aciers Inoxydables Austenitiques 304,316.

R. Badji, M. Hadji, M. TemmarDépartement des Sciences des Matériaux, Institut de Mécanique, Université de Blida, B. P 270, Route de Soumâa, Blida


Abstract:

Le durcissement par écrouissage des aciers inoxydables austénitiques est étroitement lié à la quantité de martensite ’formée sous l’effet de la déformation plastique. Dans ce travail, nous avons étudié l’effet de la taille du grain austénitique sur le taux de durcissement par écrouissage des nuances austénitiques du type AISI 304 et 316, lors de leur déformation par laminage à la température ambiante. Pour ce faire, des échantillons de ces aciers ayant des tailles de grains de 15, 125, 229 m pour l’acier inoxydable 304 et 25 et 115 m pour l’acier inoxydable 316 ont été laminé avec des taux de réduction allant de 16 à 49%.

Effect of Erbium Incorporation on Properties of DC Sputtered Hydrogenated Amorphous Silicon Films

M. Kechouane, N. Beldi, O. Mouheb, T. Mohammed-Brahim*, A. S. Barriere**, H. L’Haridon*** and M. Gauneau***Laboratoire “ Couches Minces et Semiconducteurs ”-U. S. T. H. B- Institut de Physique-BP 32-El Alia- 1611 Alger- Algeria.*GMV- Université de Rennes I-Campus de Beaulieu- Bat. B de Physique- 35042 Rennes Cedex-France.**Laboratoire IXL-Université de Bordeaux I – 351 Cours de la Libération –F-35042 Rennes Cedex-France.***France telecom CENT/LAB/RIO-22300 Lannion-France.


Abstract:

Erbium doped semiconductors present much interest for optoelectronic devices owing to a luminescence relatively independent of the host semiconductor matrix. The great interest in the Er3+ ions that can be incorporated into the host material without showing a concentration-quenching problem is an important factor in designing Er-doped optical devices. Thus, a high solubility of erbium is desirable because the optical power out is proportional to erbium content into the host-matrix. It is estimated that an erbium concentration as high as 1020-1021~cm-3 is necessary for thin film optical amplifiers.

A MONTE CARLO SIMULATION OF MAGNETIC TRANSITIONSIN FERROMAGNETIC MATERIALS

A. BELAIDI, L. BAHBAH+ and F. Z. BENKENFOUDDépartement de Génie-Electrique, E.N.S.E.T. D’Oran, 31000-Oran-ALGERIE.

Wednesday, 27 October09:00 - 09:40

Abstract:

In this work we study the effect of temperature on the alignment of spins in ferromagnetic materials by means of Monte Carlo simulation. An Ising model was used to study the system of interacting spins and the spin dynamic was based on the Metropolis algorithm. A strong magnetic transition was found at a particular temperature (critical or Curie temperature) which characterizes the transition of the material from ferromagnetic to paramagnetic. We surprisingly found that this phenomenon occurs even in one-dimensional ferromagnetic materials where other workers claims that there is no magnetic transition in such materials. The results of the physical quantities obtained by simulation are, however, in good agreement with those predicted by theory.

Electrical characteristics of n-type GaN grown by LP-MOVPE

Z. Bougrioua*, J.-L. Farvacque#, I. Moerman*, E.J. Thrush" *


Abstract:

Because of their specific properties, such as wide band gap, thermal and chemical stability, high breakthrough field and high electron saturated drift velocity, the group III nitride compound semiconductors are currently attracting more and more attention for the development of advanced high power and high frequency electronic devices. In spite of the promising erformance of the first elemental devices as field effect transistors, the production of material with low residual impurities, low extended defect density, high electron mobility and accurate control of doping and compensation is still very challenging. Undoped Gallium Nitride (GaN) material displays quite a poor mobility because of the high density of point defects and extended defects as dislocations (columnar structure), which are a consequence of the growth on a highly mismatched substrate such as sapphire. This presentation contributes to the understanding of the correlation between electrical characteristics of n type GaN layers grown by Low Pressure Metallorganic Vapor Phase Epitaxy (LP-MOVPE) and the microstructural properties of the material. One of the

experimental results shows that the room temperature carrier mobility in bulk layers of undoped or Si doped GaN improves suddenly by up to a factor of 20 once the carrier density exceeds a critical value of about 7e17cm-3. This clear transition in transport regime can't be explained in the framework of a transport model considering dislocations as randomly distributed scattering centers. But it can be theoretically reproduced by assuming that the columnar structure is responsible for internal electronic barriers.

OPTIMIZED AL0.1Ga0.9 SOLAR CELLS WITH JSC = 25.076 mA/cm2 AND AM1.5G = 24.74%

L. Semra, M. Remram, and A. Laugier*

Institut d'Electronique, Université de Constantine, Route Ain-El-Bey, 25000 Constantine, Algérie.*Laboratoire de Physique de la Matière, INSA, Lyon, 20 Avenue A. Einstein, 69621 Villeurbanne, France.


Abstract:

The main aim of the several simulations, theoretical or experimental researches is to improve conversion efficiency advanced technology. Since the ternary alloy AlGaAs grown on Si substrate is among the most important material candidate for optoelectronic circuitry as well as for solar cells application and is specially of considerable interest for multispectral applications. This paper describes a study of an Al0.1Ga0.9As solar cell. The aim of this work is to find the optimized device makeup such as the semiconductor layer thickness and impurity doping in emitter and base regions. The optimal emitter thickness and doping as well as the base thickness and doping are calculated. In this work the judicious choice of aluminum content of the AlGaAs layer is a particular considered point. The results are generated for 0.25 cm2 area with an Erfc emitter profile. A front surface recombinaison velocity Sfront of 1.104cm/s is adopted here. For the back surface

recombinaison velocity Sback a value of 1.107cm/s for an Ohmic contact is used and a value of 1.104cm/s for a BSF layer.

Caractérisation structurale et électrique des couches minces de Bi2S3 préparées par la technique Spray pyrolysis

N.Benramdane, M.Medles, M. Latreche, A. Bouzidi, Z. Kebbab et H. TabetLaboratoire Physique des matériaux et dispositifs, Institut d’électroniqueUniversité Djillali Liabes de Sidi Bel Abbès, Algerie.

Wednesday, 27 October 11:05 - 11:20

Abstract:

Les films de Bi2S3 polycristallin ont été préparés par la technique Spray Porlysis en utilisant comme produits chimiques de départ le chlorure de (BiCl3) et la thiourée CS(NH2)2 préparés en solutions de Molarité 0.2.Les couches sont obtenues par déposition thermochimique sur des substrats en verre Pyrex à une température de 550 K. L’identification de la nature polycristalline des films est faite en utilisant un diffractomètre -2 . La microscopie électronique des couches montre que ces derniers sont d’une morphologie assez particulière et présence des surfaces qui se caractérisent par des fonctions en aiguilles entrelacées.Les mesures d’effet Hall montre que ces couches sont du type N avec une concentration en porteurs de charges de 3.45 1017 cm-3 et une mobilité de Hall de 19.7 cm2 /V.s.L’allure de la variation de la conductivité en fonction de la température montre que celle-ci suit une loi de la forme, avec Ea= 65 meV comme énergie d’activation et 0=9.33 -

1cm-1 , et confirm la nature semiconductrice du composé.

The use of porous silicon in photovoltaic applications

A. Ould-Abbes, K. Rerbal and N.E. Chaabane SariLaboratoire de physique des matériaux, institut d’électroniquesUniversité Aboubekr Belkaid de TlemcenBp 119, Tlemcen 13000, Algérie


Abstract:

Crystalline silicon is the dominant semiconductor material in use for photovoltaic cells. Furthermore, the porous silicon (PS) formed by simple etching presents physical characteristics that can have a particular interest for these applications.Indeed, a thin PS film deposited at the emitter surface of p/n+ junction plays a role of an effective antireflection coating (ARC).In this work, we present optical and photovoltaic properties of p/n+ Si junctions so obtained, before and after oxidation, under different etching parameters in order to optimize the anti-reflection properties of the PS layer.The optical properties of thin PS film have been studied by spectroscopic ellipsometry (SE) and total reflectance measurements, and compared to those of the anti-reflection layers prepared by the chemical depôsite techniques.The spectral response measurements of the solar cells with the partly porous emitter demonstrate clearly the improvement in the quantum efficiency after oxidation of the PS layer.

State of the Art of Semiconductor Detectors

T.HadjersiUnité de développement de la téchnologie du Silicium02, Bd. Frantz fanon B.P. 339 Alger-Gare, Algérie


Abstract :

The development of semiconductor radiation detectors as spectrometers started in 1985 with the first study of a Germanium surface-barrier detector as heavy-particle spectrometer by Mayer and Gossik. However, prior to this time there was extensive development of gas detector, such as Geiger-Muller tubes, ionization chambers, and proportional counters. Among advantages of semiconductor detectors are the linear response over a large energy range, the fast pulse-rise time from most of the detector, their relative simplicity and convenient size, the possibilities of making special configuration, their density, which enables them to stop energetic charged particles and the high resolution that can be obtained.The principal aim of this article is to give a state of the art in semiconductor detectors for photon and charged particle. Most attention is devoted on more recent characteristics obtained with various detectors up to now. This paper also presents the application domain of each detector type.

The Electronic Structure of CuCl

M.ferhat Laboratoire de Physique. Institut du Tronc Commun.Université des Sciences et de la Technologie d’Oran. ( U.S.T.O ). Oran 31 000. AlgerieB.Bouhafs and H.Arouag Computational Materials Science Laboratory, Physics Departement, University ofSidi Bel – Abbes, Sidi Bel – Abbes 22000. Algeria.

Abstract

We report a systematic study of the electronic properties of zinc – blende CuCl. The band structure, valence and conduction effective mass, density of states and charges densities are calculated using the local density all – electron full – potential linearized augmented plane wave method. Our results are in agreement with a host of theoretical and experimental data yielding a consistent description of electronic properties of this class of technologically important semiconductor compounds.

Preface

The first Arab Congress in Materials Science is organized by the University of Sidi Bel-Abbès jointly with the Algerian Materials Research Society (AMRS). This meeting aims to enhance the communication between Arab scientists in both experimental materials research and computational work. This conference will cover materials experiment and modelling in the widest sense of the word, ranging from traditional solid state physics to the study of biologically relevant applications. We will approach this vast topic by emphasizing the experimental and computational aspects, as they relate to not only the amazing richness of different materials and associated phenomena, but to the wealth ofexperimental techniques used to fabricate and characterize complicated novel materials. This conference is also a good opportunity for a close interaction between Arab physicists and chemists.

Topic Areas :

International Programme Committee :

M. S. Abujafar (Palestine) M. Henini (UK)

N. M. Abu-Samreh (Palestine) H. A. Ismael (Qatar)

M. Al-Dhafiri (Saudi Arabia) I. Ismael (Kuwait)

A. S. Al-Harti (Saudi Arabia) A. Issam (Oman)

S. N. Al. Refaie (Jordan) M. Kerouad (Morocco)

M. Al-Saie (Bahrain) M. Laradji (Canada)

N. Amrane (Algeria) M. Meskini (Tunisia)

H. Aourag (Algeria) A. Qteish (Jordan)

A. Bensaoula (USA) A. Rais (Oman)

A. Bouabdellah (Algeria) M. K. Sabra (Syria)

K. S. Bhatia (Kuwait) M. B. Sayed (Egypt)

N. Bouarissa (Algeria) N. Tit (UAEmirats)

M. M. El-Desoky (Egypt) M. Zoaeter (Lebanon)

Organizing Committee:

Dr. N. Amrane (Department of Physics, Univ. of Sidi Bel Abbes)

Prof. H. Aourag (Department of Physics, Univ.of Sidi Bel Abbes)

Dr. B. Bouhafs (Department of Physics, Univ. of Sidi Bel Abbes)

Dr. A. Tadjer (Department of Physics, Univ. of Sidi Bel Abbes)

Dr. B.Mouffok (Department of Chemistry Univ. of Sidi Bel Abbe

Dr. Louhibi (Department of Physics, Univ. of Sidi Bel Abbes)

M. O. Benhelal (Department of Physics, Univ. of Sidi Bel Abbes)

M. A Chahed (Department of Physics, Univ. of Sidi Bel Abbes) Ms. W. Sekkal (Department of Physics, Univ. of Sidi Bel Abbes)

Ms. Z. Nabi (Department of Physics, Univ. of Sidi Bel Abbes)

Ms. S. Meçabih (Department of Physics, Univ. of Sidi Bel Abbes)

Ms. N. Benosman (Department of Physics, Univ. of Sidi Bel Abbes)

M. B. Abbar (Department of Physics, Univ. of Sidi Bel Abbes)

M. A.Sayed (Department of Physics, Univ. of Sidi Bel Abbes)

M. A. Lakdja (Department of Physics, Univ. of Sidi Bel Abbes)

WELCOME

PLAY

PLAY

WELCOME

VALENCE BAND STRUCTURE OF HgCdTe/CdTe STRAINED-LAYER QUANTUM WELLN. Mokdad, K. Zitouni, A. Kadri.

Strain effects on graded index separate confinements heterostructures (GRIN-SCH)M. Mattalah, K. Zitouni, A. Kadri

CHARACTERIZATION OF QUATERNARY SEMICONDUCTOR MATERIALSH. Ait Kaci

PHOTON SCANNING TUNNELING MICROSCOPY: THEORETICAL AND EXPERIMENTAL STUDY OF A BIDIMENSIONNEL GRATINGH. Boutaleb, A. Mamoun,G. Bassou, L. Salomon, F. De Fornel

POSTER SESSION A

ANOMALOUS BEHAVIOR IN THE PHYSICAL PROPERTIES OF BORON COMPOUNDSBachir Bouhafs and Hafid Aourag

OPTICAL PROPERTIES OF ACTIVATE LASER (F2+)H CENTRES IN

NaCl CRYSTALS DOPED WITH HYDROXIDE IONSE. Boulma

COMPUTED DECONVOLUTION OF ABSORPTION SPECTRA OF ACTIVE LASER MATERIALS : CARBONATE-, AND SODIUM-DOPED ALKALI HALIDE CRYSTALSK. Labbaci

MONTE CARLO SIMULATION OF THE TRANSPORT OF SLOW POSITRON IN ALUMINIUMS. Saib, H. Latelli, S. Zellag and N. Bouarissa

WELDED STEEL CRACKINGH. Zedira and A. Boumaaza

RBS-CHANNELLING STUDY OF ANTIMONY IMPLANTED SI(100)R. Labbani and R. Halimi

HIGHER TWIST EFFECT AND (T-EFFECT IN A HEAVY QUARK PRODUCTION IN HADRONIC COLLISIONSZ. Belghobsi

STUDY OF TANTALUM CARBIDES COATINGSY. Hadjar and R. Halimi

INFLUENCE OF TWINS ON THE VORTEX PINNING IN YBaCuO SINGLE CRYSTALS IN TILTED FIELDM. Boudissa, R. Halimi, K. Frikach, S. Senoussi.

KINETICS OF THE CONVERSION OF SEMI-INSULATING GaAs TO p-TYPE AFTER HIGH TEMPERATURE ANNEALINGA. Nouiri, A. Djamel

MAGNETIZATION CHARACTERISTIC OF Fe/Ag MULTILAYERS GROWN EPITAXIALLY ON MgO(001)F. Chemam, A. Bouabellou, M-F. Mosbah, R. Halimi

CHARACTERIZATION OF METAL HYDROGENATED AMORPHOUS SILICON CONTACTS AS SCHOTTKY BARRIER AND THEIR ELECTRICAL BEHAVIOR UNDER HYDROGEN AND OXYGEN MOLECULAR GAS K. Laihem, R. Cherfi and M. Aoucher

ELECTRICAL BEHAVIOUR OF HYDROGENATED AMORPHOUS SILICON DEPOSITED BY DC- MAGNETRON SPUTTERING AT HIGH TEMPERATURE AND HIGH RATEG. Farhi, R. Cherfi, M. Aoucher and K. Zellama

OPTICAL INVESTIGATION OF THE STRUCTURAL PROPERTIES OF AMORPHOUS HYDROGENATED SILICON DEPOSITED BY DC-MAGNETRON SPUTTERINGG. Farhi, R. Cherfi, M. Aoucher and K. Zellama

NITRATE ABSORPTION CONCENTRATION OF ROSA HYBRID SWEET PROMISE GROWN SOULLESS S. Bougoul, R. Brun & A. Jaffrin.

IMPROVEMENT OF QUANTUM YIELD IN A SB DETECTORS BY EXCITATIONS OF SURFACE PLASMONSS. Zellag, A. Sellai, S. Saib

LAPW CALCULATION OF THE PHYSICAL PROPERTIES OF THE METAL CARBIDES: TITANIUM CARBIDE T. Amriou and B. Bouhafs

FIRST-PRINCIPLES CALCULATIONS OF OPTICAL PROPERTIES OF BULK SnTeZ. Nabi, and N. Amrane

ELECTRONIC AND OPTICALPROPERTIES OF THE SERIES OF PbX COMPOUNDSB.Abbar, Z.Nabi, N.Amrane, B.Bouhafs, A. Tadjer, and H. Aourag

FP-LAPW Calculation of electronic and structural properties of TiCS. Méccabih, Z. Nabi, B. Abbar and N. Amrane

FP-LAPW CALCULATION OF ELECTRONIC AND STRUCTURAL PROPERTIES OF TiNN. Benosman, Z. Nabi, B. Abbar and N. Amrane

ELECTRONIC STRUCTURE CALCULATIONS FOR TIO USING THE FULL POTENTIAL LAPW METHODF. Laksari, Z. Nabi, B. Abbar and N. Amrane

OPTICAL AND ELECTRONIC PROPERTIES OF SiO2

N. Abbouni, Z. Nabi, B. Abbar and N. Amrane

COMPARATIVE ANALYTICAL STUDIES OF PARABOLIC AND RECTANGULAR QUANTUM WELL BASED ON Si/SiGeA. Benchikh, N. Amrane

QUANTUM MONTE CARLO INVESTIGATION OF EXCHANGE AND CORRELATION IN SILICONA. Kellou and N. Amrane

InxGa1-xN STRUCTURE REFRACTIVE INDEX CALCULATIONSM. Annani, Z. Chama, M. Khadraoui, B. Bouhafs and N. Amrane

REACTIVE OXYGEN SITES AT THE (001) V2O5 SURFACEChristian Mathieu, Brahim Khelifa, Adlane Sayede and Hafid Aourag

THE CALCULATION OF ELECTRONIC PROPERTIES OF FeSi2 AND FeSiA. Laref and H. Aourag

OSCILLATING, DECAYING, AND COLLAPSING SOLITONS IN THE GENERALIZED NONLINEAR SCHRÖDINGER EQUATIONR. Moussa, S.Goumri-Said, and H.Aourag

MOLECULAR DYNAMICS SIMULATION OF CuI USING A THREE-BODY POTENTIALW.Sekkal, A. Zaoui, A. Laref, M. Certier and H. Aourag

DEVICE MODELING OF LIQUID CRYSTAL DISPLAY AND APPLICATIOND. Sari, H. Aourag

STUDY OF ELECTRONIC, ELASTIC, STRUCTURAL AND THERMODYNAMIC PROPERTIES OF CdTe AND ZnTeA. E. K. Merad, M. B. Kanoun, A. Laref, W. Sekkal, H. Aourag and G. Merad

TIGHT-BINDING CALCULATIONS OF II-VI COMPOUNDSA. E. K. Merad, A. Laref, H. Aourag and G. Merad

THEORETICAL STUDIES OF POSITRON ANNIHILATION IN GaAlN AND GaInN ALLOY SYSTEMSF. Benkabou, and H. Aourag

POSTER SESSION B

DIELECTRIC PROPERTIES OF ZINC BLENDE GaN, InN AND AlN UNDER STRAINA. Tadjer, M.Rezki, B.Abbar, and H. Aourag

PROPRIETES ELECTRONIQUES, OPTIQUES ET STRUCTURALES DU SiC ET GeCS. Ait Abderrahmane and H. Aourag

THE IONICITY CHARACTER OF III-V COMPOUNDS UNDER PRESSURE EFFECTY. Al-Douri, H. Abid, and H. Aourag

CARACTRISATION DES TRANSISTORS BIPOLAIRES A BASE DE GaN S. Mansouri, Z. Benamara, R. Brahimi, S. Nouar, B. Cruzza

MONTE- CARLO CALCULATIONS OF KEV POSITRON SLOWING DOWN IN SOLIDSZ. Bousahla

MODELISATION DES SYSTEMES PHYSIQUES PAR MATLABF. Krim, Y. Mami, K. Driss-Khodja

CREUSEMENT THERMIQUE DANS LES COUCHES MINCES: APPLICATION DU MODELE DU CREUSEMENT THERMIQUE A UNE COUCHE MINCE DE SILICIUM POLYCRISTALLINN. Benkhettou, B.Soudini & D.Rached

APPROCHE DE LA PROBLEMATIQUE DU NON-LIQUIDE DE FERMI EN DIMENSION UN AU MOYEN DES THEORIES CONFORMESM. Doui-Aici, B.soudini & H.Abid

STORED CHARGES ANALYSIS IN STRUCTURES OF FOUR-LAYERA. Hallouche

ETUDE DE L'EVOLUTION DU NIVEAU DE FERMI SUPERFICIEL A L'INTERFACE DES DIODES SCHOTTKY Al/GaAsH. Mazari, Z. Benamara, N. Bachir Bouiadjra, O. Bonnoud

STRUCTURAL AND THERMODYNAMIC PROPERTIES OF ZINC-BLENDE ZnSe BY MOLECULAR DYNAMICS SIMULATIONF. Z. Aoumeur

L'EFFET DES PIEGES SUR LES CARACTRISTIQUES ELECTRIQUES DES DIODES SCHOTTKY Au/InP (100) ET Au/InSb/InP(100)B. Akkal, Z. Benamara, A. Bouzidi, L. Bideux, B. Gruzza

ETUDE PAR LA METHODE DE LA DYNAMIQUE MOLECULAIRE DE DETECTEURS OPTOELECTRONIQUES DANS L'INFRAROUGE A BASE DU SixGe1-x et du SiGeS. Berrah, M. Driz

ANALYSIS OF THE DEGRADATION ON THE EXTERNAL SURFACES OF THE POLYMER MATRIX COMPOSITE BY THE OPTIMIZATION OF THE FIBBER ORIENTATIONE. Bedia Adda, A. Tounsi, Z. Sereir, B. Boucham and H. Houari

A MODEL FOR ANALYZING THE INTERFACE STATES EFFECT OF A MOS STRUCTUREH. Dib, Z. Benamara, A. Boudissa, F. Raoult, and O. Bonnaud

EFFECT OF GRAIN SIZE AND GRAIN BOUNDARIES STATE DENSITY IN POLY-Si(N+/C-Si(P) SOLAR CELL USING FIRST-PRINCIPLES COMPUTER MODELINGB. Zbentout, H. Sehil, A. Joti, H. Dib, H. Boudiaf, Y. Bourezig and Z. Benamara

Evaluation of The Size of The Plastic Zone in Mode I for Elasto-Plastic Behavior MaterialM. Benguediab, M. Belhouari, K. Madani and N. Ranganathan

STUDY AND SIMULATION OF THE SPECTRALLY RESOLVED (SI-SPL) SCANNING PHOTOLUMINESCENCE APPLIED TO InAlAs/InP HETEROSTRUCTUREH. Gharib, T. Benbakhti, M. Derras

ETUDE DE L'AMORPHISATION DE LA SURFACE DE Si(111) PAR BOMBARDEMENT IONIQUE ET DE LA REORGANISATION PAR RECUIT THERMIQUEA. Cheheb

ETUDE DE L'EFFET DE RESONANCE DANS LES STRUCTURES A EFFET TUNNELH. Khalfoun, F. Hamdache and N. Benharrats

VALENCE BAND STRUCTURE OF HgCdTe/CdTe STRAINED-LAYER QUANTUM WELL

N. Mokdad, K. Zitouni, A. Kadri.Laboratoire de Micro-Opto-Electronique, Université d'Oran Es-Senia, Alg\'erie.

HgCdTe is an important material for quantum well infrared (QWI) device technology. This material is used for a fabrication of a narrow strained layer quantum wells such as CdTe/HgCdTe/CdTe. In this study we use a H8x8 Luttinger-Kohn hamiltonian and the Pikus-Bir hamiltonian which take into account the strain effect. Using a unitary transformation and an axial approximation the H8x8 Luttinger is diagonalized on two 4x4 block matrix. We present numerical result for effective masses, confinement energies and valence band structure for a Cd mole fraction x leather than ( tension strain). We have shown that the coupling between the conduction and valence band play important role in mixing of the valence band and addition of strain reduce of light hole masse.

Strain effects on graded index separate confinements heterostructures (GRIN-SCH)

M. Mattalah, K. Zitouni, A. KadriMicroOptoElectronic Laboratory, University of Oran Es-Senia.

We report a detailed examination of the biaxial strain effects on the electronic structure of Graded-index separate confinement heterostructures (GRIN-SCH) based on (Zn, Cd) Se wide band-gap II-VI seminconductors which are designed in the view of a blue-green light emission device. These heterostructures are constituted of a layer of a semiconductor compound having quite a large refractive indice embeddede between two thick layers of semiconductor compounds with lower refractive indexes. This leads to a significant enhancement of carriers and photons confinement. The valence subbands and confinement energies of the strained heterostructure are calculated within the enveloppe function approximation and the transfer-matrix formalism. Since the potential gradient is small in the GRIN regions, we have considered these regions as a perturbation in comparison with a standard square well problem. We obtain an important carrier confinement in the central quantum well of the GRIN-SCH structure under biaxial strain which affect the arrangement of the subbands. This result increase the transition energies. Therefore, this enhance the laser emission

CHARACTERIZATION OF QUATERNARY SEMICONDUCTOR MATERIALS

H. Ait KaciInstitut de Physique, Université d'Es-Sénia, B.P 1524, Oran El M'Naouer (Algérie).U.S.T, Oran 'Mohamed Boudiaf' Bp 1505 El Menaour Oran. 31076

not received

PHOTON SCANNING TUNNELING MICROSCOPY: THEORETICAL AND EXPERIMENTAL STUDY OF A BIDIMENSIONNEL GRATING

H. Boutaleb*, A. Mamoun* ,G. Bassou#, L. Salomon!!, F. De Fornel!!*Institut de Physique, Laboratoire d'Optique, B.P 1524, Oran El M'Naouer (Algérie).# Loratoire de Microscopie Electronique, UDL de Sidi Bel-Abbès (Algérie).!! LPUB Equipe Optique de Champ Proche, Faculté des Sciences Mirande, B.P. 400-21011 Dijon Cedex (France).

Many theoretical and experimental works on the near field optic microscopy have been achieved with objective the improvement of the optic microscopes in far field. During this last decade, a new type of optic microscope was developed, whose principle is founded on the analysis of the near field given out by the studied object. This detection in near field allows to throw off a limitations owed to the phenomenon of diffraction and the last devices constructed permit to reach a resolution of the order of [1]. The Photon Scanning Tunnel Microscope (P.S.T.M.) makes part of this new type of microscope [2-4]. His principle consists in illuminating the sample in total reflection and collect the transmitted photon flux by a tapered optic fibre. By displacing this tip probe in front of the surface of the sample, it is possible to construct a set of lines from of which one hopes to determine the roughness of the object [5]. However, of the fact of its novelty, mechanisms governing the formation of a P.S.T.M picture. are not clarified perfectly. In order to overcome to this mechanisms, it is necessary to know what the optic fibre captures during its scanning and to control the interaction between this one and the evanescent field. then, we suggest to study some calibrated samples tests. In this work, we study by using the differential

method [6-8], the diffraction of light by a bidimensionnel grating (2D) and we compare results obtained with the experimental results achieved with the help of a P.S.T.M.

REFERENCES:[1] : D. W. Pohl, W. Denk, M. Lanz, Optical stethoscopy : image resolution with , Appl. Phys. Lett. 44, 651 (1984).[2] : R. C. Reddick, R. J. Warmack, T. L. Ferrell ''New form of scanning optical microscopy'', Phys. Rev. B 39, 767 (1989).[3] : D. Courjon, K. Sarayeddine, M. Spajer ''Scanning Tunneling Optical Microscopy'' Opt. Commun., 71, 23 (1989).[4] : F. de Fornel, J. P. Goudonnet, L. Salomon, E. Lesniewska, ''An evanescent field optical microscope'', Proc SPIE 1139, 77 (1989).[5] : Frédérique de FORNEL, ''Les ondes évanescentes en optique et en optoélectronique'' Editions EYROLLES octobre 1997.[6] : R. PETIT in '' Electromagnetic theory of grating '' Ed. Spinger, Verlag, Berlin 1980.[7] : R. Petit: Rev. Opt. 8, 353 (1966).[8]: M. Neviere, P. Vincent, R. Petit: Nouv. Rev. Opt. 5, 65 (1974).

MODELISATION DES SYSTEMES PHYSIQUES PAR MATLAB

F. Krim, Y. Mami, K. Driss-KhodjaLaboratoire de Physique de la Matière Condensée Département de Physique Faculté des Sciences Université d'ORAN Es-Senia

Matlab est un environnement complet pour le calcul scientifique et technique regroupant puissance de calcul, visualisation et bibliothèques de fonctions, ce dont nous avons besoin pour résoudre les problèmes techniques les plus complexes. Il possède aussi son propre langage de programmation, qui, naturel, permet d ’écrire les programmes bien plus rapidement qu'en C ou qu'en Fortran. Avec Matlab, nous pouvons rapidement et facilement traiter les données, sans aucune limitation de taille, et évaluer les modèles les plus complexes. C'est également plus de 500 fonctions mathématiques, scientifiques et techniques qui fournissent toute la puissance de calcul dont nous avons besoin. Matlab s'intègre avec d'autres environnements. Nous pouvons lier dynamiquement Matlab à des programme C ou Fortran, changer des donnes avec d'autres applications ou utiliser Matlab comme moteur d'analyse et de visualisation. Les boites outils Matlab sont le produit de recherches pointues en sciences et ingénierie. Elles apportent des fonctionnalités de très haut niveau dans nombre de domaines, tels que le traitement du signal, l'automatique et la modélisation mathématique. Elles nous permettent également d'associer les techniques les plus innovantes dans le même environnement de travail. Nous pouvons modéliser rapidement, sous forme de schéma bloc, les systèmes linaires, non linaires et hybrides, évoluant en temps discret ou continu. De plus, de très nombreux blocs que nous pouvons positionner et lier pour construire nos modèles, sont fournis.

ETUDE DE L'EFFET DE RESONANCE DANS LES STRUCTURES A EFFET TUNNEL

H. Khalfoun, F. Hamdache and N. BenharratsLaboratoire de physique , electronique du solide , Université des sciences et techniques , Oran

Dans cette étude une comparaison entre les performances des structures symétriques Double-Barrière (D.B) et triple barrière (T.B), ainsi que l ’étude des conditions de convergence est réalise. Par le formalisme de la matrice de transfert et les conditions de continuité de Bastard, le comportement d'une particule 'incidente quasi libre' de masse effective m* travers ces deux structures symétriques est tudi. Il apparat partir des vitesses de transmission la résonance. La vitesse représente une grandeur dynamique qui traduit l’efficacité de la structure conduire que la structure T.B est largement plus compétitive que la structure D.B. Nous nous intéressons l'effet du couplage agissant en tant que perturbation sur les états appartenants des puits isolés. En absence de forme analytique de la perturbation w(x), il nous est possible d ’évaluer les taux de recouvrement w ij entre les deux états non perturbés et . Le processus de transfert de charge dépend du taux de recouvrement. Une étude plus détaille sur wij et des états résonnants Er en fonction des paramètres structuraux 'a' et 'b' qui représentent respectivement la largeur du puits et l ’épaisseur de la barrière nous permettra de déterminer la vitesse de transmission la résonance, la nature de l'onde électronique ainsi que la structure optimale pour laquelle la probabilité de transmission par effet tunnel résonnant est la plus importante.

LES ALGORITHMES REVERSIBLES DANS LE TEMPS ET LA DYNAMIQUE MOLECULAIRE

N. TchouarInstitut de Chimie Industrielle, U.S.T, Oran'Mohamed Boudiaf' Bp 1505 El Menaour Oran. 31076

Les méthodes d'intégration des équations de mouvement d'un système de référence ne sont pas réversibles dans le temps et manifestent un caractère instable dans les temps larges. La factorisation de trotter du propagateur de Liouville est utilise pour gnrer les nouveaux intégrales réversibles dans la dynamique moléculaire. Cette stratégie est applique pour driver les algorithmes propagateurs réversibles d'un système de référence (R.E.S.P.A). Ces nouveaux algorithmes accélèrent la simulation des systèmes, sont réversibles dans le temps et sont plus stables que les algorithmes standards connus. Dans ce travail, nous allons présenter le formalisme de l'opérateur de Liouville, la factorisation de Trotter du propagateur classique qui peut être utilise pour dériver des intégrales simples. Nous allons montrer que ces méthodes d'intégrations peuvent êtres utilises pour accélérer l'intégration des équations de mouvement des systèmes en contact avec le thermostat de Nos. Ensuite, nous allons driver les équations de mouvement pour un ensemble NPT en appliquant le principe d'Anderson. Finalement, une comparaison a t faite avec un algorithme standard de Leap-Frog et un algorithme propagateur réversible en étudiant toutes les propriétés thermodynamiques, structurales et de transport d'un système de Lennard-Jones : Méthane Liquide. Le but de cette comparaison est de tester la rapidité et la précision d'un algorithme réversible dans le temps.

OPTICAL PROPERTIES OF ACTIVATE LASER (F2+)H CENTRES IN

NaCl CRYSTALS DOPED WITH HYDROXIDE IONS

E. BoulmaLaboratoire de Cristallogénése et Spectroscopie Institut de Physique B.P. 12 Université de Annaba 23000, Annaba-Algérie.

Key Words : Laser; color centre; absorption; emission.During the past few years color centers in alkali halides have received renewed attention because of the usefulness as laser-active centre in the near infrared (IR). Furthermore, the F2+ centre ( two anion vacancies binding one electron) has show a high quantum efficiency, and can be produced in any alkali halide host covering the emission range from 1 to 3 (m [1]. These color centers are also characterized by small stock shift and very low pumping threshold (of about milliwatt) which allowed to obtain laser emission using incoherent laser emission source (e.g. decharge tubes ). However these centers are unstable under pumping light and for low temperatures. Therefore, our work is focused on ways of making these centers more stable under light effects, by doping with adequate impurities. For this, NaCl doped by impurities OH- with different concentrations, is studied in order to study the effect of these ions on additive coloration, effectively, NaCl crystals doped up to 200 PPM with OH- impurities. So the increase in ion impurities concentration disappears the F centre which replaced by O2- centers. The coloured crystals have given two varieties of (F2+ )H centers with significantly different absorption and emission wavelength. The variety (a) obtained by irradiation at near room temperature (RT) and metastable at liquid nitrogen temperature (LNT), but the second variety (b) is obtained by light irradiation (365 or 436 nm) at 77K and it can convert to variety (a) at room

temperature (298K).

[1]- L. F. Mollenauer and D. H. Olson J. Appl. Phys., 46 , 3109 1975.

COMPUTED DECONVOLUTION OF ABSORPTION SPECTRA OF ACTIVE LASER MATERIALS : CARBONATE-, AND SODIUM-

DOPED ALKALI HALIDE CRYSTALS

K. LabbaciInstitut de physique, Université de Annaba, B.P. 12 Annaba, Algérie.

Not Received.

MONTE CARLO SIMULATION OF THE TRANSPORT OF SLOW POSITRON IN ALUMINIUM

S. Saib, H. Latelli, S. Zellag and N. BouarissaDepartment of Physics, University of M'sila, 280003, Algeria

Accurate modeling of motion of charged particles through solids is important many areas of material science, solid-state physics and microelectronics. All technique using positron beams and techniques using electrons beam and as the primary beam striking a target or in which electrons emitted from the target constitute the measured signal require knowledge of the interaction of positrons or electrons with the sample under study. The Monte Carlo simulation technique in which the particle trajectories are modeled as random walks, has been widely used in this field because it takes into account the complexity of the trajectories of the particles through the solid, as they suffer scattering events, in an accurate and transparent way. The accuracy of Monte Carlo method depends crucially on the modeling of the scattering processes employed in the simulations. The scattering process depend on the particle energy, but in the energy range between 1-10 KeV, which we are concerned with here, the dominant processes are elastic scattering off the individual atoms and inelastic scattering involving core and valence electron excitations. The inelastic processes associated with the slowing down of particles penetrating solid surface have been subject to investigation for decades. In this work we show that the implantation of the RPA dielectric model which we use for the description of inelastic processes and the modified Rutherford formula in Monte Carlo transport simulation produces a good agreement with experiments, for backscattering positrons from a

Aluminum target. Then we interpolate the backscattering fraction as a function of energy by the formula:(1) Where a and b are the fit parameters, proposed by Bouarissa instead of:(2) Usually utilized in literatures, which has three parameters a, b and c.

WELDED STEEL CRACKING

H. Zedira and A. BoumaazaInstitut de mécanique, Centre Universitaire d'Oum El Bouaghi, 04000, Algérie

Descriptors : Steel, Welding, Cracking, Weld, bead, Monobloc, Mechanical shovel, Structures, Phases, Martensite, Ferrite, Cementie.When an engineer would like to make a structural design, he can find out various materials. How can he make a choice ?Our study of welded steel cracking phenomena in the mechanical elements of the mechanical shovels 9210 produced in the CGP-ENMTP factory, which is situated near the city of Constantine is motivated by a lot of cracking case of the welded monoblocs find out from 1990. The principal object of our investigation is to find out how the cracks occurs into the welded joints, to make a scientific analysis and after that we can give a solution to obtain high quality welded joints. In this paper, we study also the operator, metallurgical and constructive weldability. At the end we will give the experimental results taken at the factory laboratory.

RBS-CHANNELLING STUDY OF ANTIMONY IMPLANTED SI(100)

R. Labbani and R. HalimiUnité de Recherche de Physique des Matériaux et Applications. Université Mentouri de Constantine, Route de Aïn El Bey, 25000 Constantine, Algérie.

The aim of the present work is to investigate Sb+ ions behaviour into Si(100) substrates during annealing treatments. Two doses of antimony dopant (5(1014 or 5(1015 Sb+.cm-2) are chosen with an implantation energy of 60 keV. The samples are annealed under oxygen atmosphere at 900C, 30min. A part of these specimen is introduced into a solution of 10\%HF in order to remove SiO2 oxide layer on the surface. Analysis of two kinds of samples (with and without SiO2 oxide layer) is carried out by means of channelling Rutherford Backscattering Spectrometry (RBS). It is established that the surface peak width increases with the rise of antimony dose. This phenomenon is more important in oxided specimen. Moreover, in the case of cleaned samples, a redistribution of antimony ions towards samples free surface is observed (for 5(1015Sb+.cm-2 dose) and the fraction of Sb+ that is shadowed is more significant.

HIGHER TWIST EFFECT AND (T-EFFECT IN A HEAVY QUARK PRODUCTION IN HADRONIC COLLISIONS

Z. BelghobsiDépartement de physique théorique, Université de Constantine, Constantine, Algérie

The higher twist effect for a heavy quark production in hadronic collisions is studied and its contribution is calculated. It has shown that this effect gives a yield as important as the first higher order radiative corrections.

STUDY OF TANTALUM CARBIDES COATINGS

Y. Hadjar1 and R. Halimi21 Institut des sciences exactes, Université de Batna, 05000, Batna, Algérie2 Unit. de recherche de physique des matériaux et applications, Université Mentouri de Constantine , 25000, Constantine, Algérie.

The aim of the present work is to study the Kinetic of formation and growth of tantalum carbides between e-gun beam evaporated tantalum thin layers, ~4(m thick and steel substrates containing about 1( Wt of carbon. The samples (Ta/steel) have been exposed to 1-h vacuum annealing in the temperature range 600-1100C. The effects of annealing on the phases formed, decomposition and also their purity have been investigated in the considered temperature range using X-ray diffraction, Secondary ion mass spectroscopy (SIMS) and X-ray microprobe analysis. It is found that at annealing up to 900C the compounds Ta2C, and TaC are forms. During the subsequent heat treatment from 900C to 1100C the final TaC phase grows at the expense of the Ta2C and phases. Furthermore, iron and some other element impurities were detected in the monocarbide film at high temperature.

INFLUENCE OF TWINS ON THE VORTEX PINNING IN YBaCuO SINGLE CRYSTALS IN TILTED FIELD

M. Boudissa1, R. Halimi2, K. Frikach, S. Senoussi3.1 Université de Setif, Institut de Physique, Algérie.2 Université de Constantine, Unit. de recherche de Physique des matériaux.3 Université de Paris-Sud, Laboratoire de Physique Des Solides, Orsay, France.

In the present study, we present a systematic study of twinned and detwinned YBCO crystals at temperature ranging from 4.2K to 90K, magnetic fields up to 6T and at various angles between the applied field and the c-axis. Comparison between data for the twinned and detwinned samples showed clearly the effect of twin pinning in the intermediate and high temperature region. By varying the angle of the twin planes with the magnetic field we have found that vortices lock-in to the twin planes. Pinning takes place only for magnetic fields aligned within a critical angle ( of the twin boundary plane. With the increase of the tilt angle (, the influence of twins decreased. The observed changes in (M (H) are qualitatively similar to that produced by detwinned samples. The values of the trapping angle were estimated at low and intermediate temperature. Finally, an attempt is made to describe the possible mechanisms governing these phenomenon.

KINETICS OF THE CONVERSION OF SEMI-INSULATING GaAs TO p-TYPE AFTER HIGH TEMPERATURE ANNEALING

A. Nouiri, A. DjamelLaboratoire de Physique des Solides. Université de Constantine, Constantine 25000, Algeria.

A study of the kinetics of the conduction conversion of (SI) GaAs at high temperature annealing above 800C has been made. It is shown that (SI) GaAs crystals are converted to p-type. This phenomenon is essentially attributed to concentration reduction of EL2centers and generation of acceptor defects. The present analysis which is focused on the kinetics of the conversion indicates that the acceptor concentration increases with increasing annealing temperature and time. According to this process, and starting from measured values of the migration enthalpy, it is clearly shown that both Gallium vacancy (VGa) and antisite Ga(aAs) play an important role in the dissociation of the EL2 center.

MAGNETIZATION CHARACTERISTIC OF Fe/Ag MULTILAYERS GROWN EPITAXIALLY ON MgO(001)

F. Chemam1, A. Bouabellou2, M-F. Mosbah2, R. Halimi21 Institut des Sciences Exactes et de Technologie, Centre Universitaire de Tebessa (12000)2 Unité de Recherche de Physique, Université de Mentouri, Constantine (25000).

The magnetic properties of well characterized Fe (001)/Ag (001) superlattices prepared by molecular beam epitaxy have been studied. The epitaxial growth and the quality-layered structure of the samples have been controlled by RHEED and X-ray diffraction techniques. Magnetic Hysteresis loops measured by Vibrating Sample Magnetometer (VSM) at 4.2k with the magnetic field applied parallel and perpendicular at plane film. The anisotropy calculations obtained from the magnetic hysteresis loops of the samples indicate the presence of parallel anisotropy and the dependence of Ks with the Ag thickness.

L'EFFET DE L'ATOME NEUTRE DE ZINC SUR LES PROPRIETES ELECTRONIQUES DES COUCHES D'OXYDE DE ZINC

R. A. Rabadanov*,T. Filiachi*** Lab. Des couches minces, Université de Dagestan, Dagestan, Russie** Institut d'Electronique, Université de Biskra, Biskra 07000, Algérie.

Mots clés : Oxyde de zinc, Défaut ponctuel, Energie d'ionisation, propriétés électrophysiques.En plus des défauts ponctuels déjà étudiés dans le ZnO, dans notre travail on note aussi la présence d'atomes neutres de zinc et on étudie leur influence sur la coloration des échantillons. Aussi, on montre qu'effectivement l ’énergie d'ionisation des centres donneurs diminue avec l'augmentation de la concentration des donneurs au-delà de 1017 cm-3.

CHARACTERIZATION OF METAL HYDROGENATED AMORPHOUS SILICON CONTACTS AS SCHOTTKY BARRIER AND THEIR

ELECTRICAL BEHAVIOR UNDER HYDROGEN AND OXYGEN MOLECULAR GAS

K. Laihem, R. Cherfi and M. AoucherLaboratoire des Couches Minces et Semiconducteurs, Institut de Physique, USTHB, BP 32, El Alia, 16111 Bab-Ezzouar, Alger, Algérie.

The electrical contact between a metal and semiconductor has aroused many theoretical and experimental works to determine the electrical properties of the junction. The metal hydrogenated amorphous silicon contact still not well known at now. Because of complexity introduced by the amorphous material. The junction between the metal and amorphous semiconductor induce also an interface stability. However, the defects present in the interface of the metal/hydrogenated amorphous silicon, play an important role in the exchange of electrical charges.

ELECTRICAL BEHAVIOUR OF HYDROGENATED AMORPHOUS SILICON DEPOSITED BY DC- MAGNETRON SPUTTERING AT HIGH

TEMPERATURE AND HIGH RATE

G. Farhi, R. Cherfi, M. Aoucher and K. ZellamaLaboratoire des Couches Minces et des Semi-conducteurs Institut de Physique, USTHB,BP32, 16111 Bab-Azzouar, El-Alia, Alger, Algérie.

The structural properties and the sensitivity to light exposure of hydrogenated silicon thin films are most important characteristics for this type of materials. The high deposition temperature is one of the methods that promise good structure stability, however it affects strongly the hydrogen contain in the matrix. This leads to a less sensitivity to light exposure. Because the hydrogen presence in the silicon layers is necessary to passive the defect in the amorphous material and then to perform for photoconductivity properties. In this work we report some results obtained on hydrogenated amorphous silicon (a-Si:H) deposited by CD magnetron sputtering at high rate between 15 and 20 A/s and at high temperature between 500 and 600 C. The film thickness is between 2 and 3 (m. Electrical and optical methods are used to investigate the deposited films.

OPTICAL INVESTIGATION OF THE STRUCTURAL PROPERTIES OF AMORPHOUS HYDROGENATED SILICON DEPOSITED BY DC-

MAGNETRON SPUTTERIN

G. Farhi, R. Cherfi, M. Aoucher and K. ZellamaLaboratoire des Couches Minces et des Semiconducteurs Institut de Physique, USTHB,BP32, 16111 Bab-Azzouar, El-Alia, Alger, Algeria.

Laboratoire de Physique de la Matière Condense Faculté des Sciences, Université de Picardie Jules Verne 33, Rue Saint-leu, 80039 Amiens Cedex, FranceAmorphous hydrogenated silicon (a-Si:H) layers were deposited by DC magnetron sputtering on Corring 7059 substrates. The deposition rate is about 15 A/s. In this paper, the structural properties, which strongly depend on the growth conditions and especially on the temperature substrate, were investigated by photothermal deflection spectroscopy (PDS) and optical transmission in the range 450nm-2500nm. We note that these methods complement one another. In the lower energy range (0.5-1.8 eV), we can extract from the PDS technique the gap defect density (Nd) and the Urbach tail (E0). The optical transmission , used in the higher energy range (1.5-2.5 eV) permits the determination of the optical gap (Eg) and the refraction index (ns). In the intermediate range (1.3-1.8 eV), the results of the both techniques are well overlapped. The Eg of our material determined by the both methods, is around 1.7eV and ns is about 3.3 . The lower values of are found for the layers deposited at 300C and 550C. Effectively, for this two temperature ranges, Nd is found about 5*1016 and E0 less then 65 meV. Electrical measurements are done over temperature range between 77K and 500K. The dark conductivity '(d' shows a linear

variation in the Arrhenius representation, we have obtained an activation energy values around 0.8eV. The photoconductivity ratio '(ph/(d' at 300K is higher than 104. The results obtained by the optical investigations shows good qualities of the materials. This was comforted by the electrical measurements.

NITRATE ABSORPTION CONCENTRATION OF ROSA HYBRID SWEET PROMISE GROWN SOULLESS.

S. Bougoul, R. Brun & A. Jaffrin.URTH-INRA Routedes Colles; 06410 Biot.

Recent measurements of transpiration rates and nitrate intakes of young rose plants grown in NFT are confronted with existing models. The water demand is accurately reproduced by the passive leaf evaporation process described by Penman and Monteith (PM model). The mineral demand is tentatively described by Scaife's Pump-Leak-Buffer (PLB) model. The PLB model predicts for rose plants, contrary to ray grass , little phase shift between mineral-absorption and solar radiation; as a consequence, it exclude memory effects from the previous day. But some observed features are not accounted for: the saturation of nitrate reduction rate for high solar radiation, the inhibition of root mineral absorption at high temperature . A modified PLB model (MPLB) is thus proposed, which accurately reproduces nitrate uptake fluctuations under strongly varying climatic conditions. Combination PM and MPLB models gives access to a modeling of the instantaneous absorption concentration of nitrates in rose plants. It should then be feasible to manage in real time the composition of the root medium used in soulless cultures, so that neither saline stress nor mineral carency could alter the plant growth.

EFFET DES PARAMETRES ELECTRIQUES DE LA JONCTION SUR LE VOLUME D'INTERACTION ELECTRON-MATIERE

M. Derras1, A. Kadoun2, G. Bassou2, H. Gharib2

1 Centre de développement des techniques nucléaires (CDTN), Alger.2 Laboratoire de microscopie électronique, Université de Sidi Bel Abbes.

Notre simulation par la méthode de Monté-Carlo, consiste à calculer les trajectoires des électrons primaires au sein de la cible. L'intérêt de cette technique est pouvoir simuler individuellement les divers interactions de l ’électron avec le matériau. Le principe correspond à une méthode de tirage statistique d ’événement. Chaque électron pénétrant dans la cible subit au cours de sa trajectoire, une succession d ’événement de type \'{e}lastique ou inélastique, ce dernier donnant lieu plusieurs \'{e} parmi lesquelles l ’émission électronique. Suite à un choc, la direction de l ’électron primaire et éventuellement son énergie sont modifies. Entre deux événements, la moyenne du trajet rectiligne est dite ''libre parcours moyen'' (noté(e). Dans ce travail nous nous intéressons à une utilisation de ce model de calcul pour la détermination de l'effet des paramètres électrique de la jonction sur le volume d'interaction électron-matière.

IMPROVEMENT OF QUANTUM YIELD IN A SB DETECTORS BY EXCITATIONS OF SURFACE PLASMONS

S. Zellag, A. Sellai, S. SaibUniversité de Blida, Institut de TCT

Our aim is to improve the quantum efficiency of SB detectors in infrared region. In the present work we have in first used SPs excitation based on optical method R-T-A to obtain an important optical absorption in IR region. For example a prism-air gap (800nm)-PtSi (8nm)-Si device will give an absorption of 25% due to SPs enhancement at (=3000nm.In second we have developed a computer program using Monte Carlo calculations. The probabilistic behavior of this method permitted to study hot holes motion. Calculations and studies of quantum yield are related to values of many variable parameters, which are free paths of hole-hole scattering and hole-phonon scattering and less per hole-phonon collision and others. We have obtained a change in the quantum yield from 3% to 8% for PtSi/Si at =3000nm.

EVOLUTION D'UNE STRUCTURE DUAL-PHASE A PARTIR D'UN ACIER DISPERSOIDE X60

S. Zidelmel & M. HadjiDépartement des Sciences des Matériaux, Institut de Mécanique, Université de Blida, B. P 270, Route de Souma, Blida.

L'entreprise de sidrurgie ENSIDER produit, sous forme de tles obtenues par laminage contrl, des aciers dispersions de nuance X60, destins la fabrication des pipelines utiliss par la SONATRACH. Un acier X60 (0.12\%C-1.49\%Mn-0.036\%Nb-0.04\%V) atteint sa rsistance essentiellement par le raffinement du grain, et le durcissement par prcipitation qui rsulte de l'addition des lments dispersions. Cependant l'exception du raffinement du grain, la plupart des procds utiliss pour augmenter la rsistance ont tendance diminuer la ductilit. Un des chemins suivis pour surmonter ce problme est de dvelopper des aciers plusieurs phases dans lesquelles les constituants sont responsables pour les diffrentes exigences des proprits mcaniques. L'exemple typique d'un acier plusieurs phases est l'acier dual-phase.

LAPW CALCULATION OF THE PHYSICAL PROPERTIES OF THE METAL CARBIDES: TITANIUM CARBIDE

Z. Dridi, T. Amriou and B. BouhafsComputational Physics Laboratory, Physics Department, University of Sidi-Bel-Abbes, 22000 Sidi-Bel-Abbes, Algeria.

Titanium carbide (TiC) is a ceramic material with many applications in key high technologies, from mechanical to chemical and microelectronics. Titanium carbide also has a high melting point, high hardness, high electrical conductivity, high chemical and thermal stability, high wear resistance, and high solvency for other carbides. It can be used as a substitute for tungsten carbide, a common machining material. Titanium carbide is also used in coated steel press tools, grinding wheels, wear-resistant coatings, high-temperature heat exchangers, magnetic recording heads, turbine engine seals, and bulletproof vests. Titanium carbide and carbonitride are also utilized in the production of SiC-TiC, Si3N4-TiC, and Al2O3-TiC and ZrO2-Ti(C,N) composites.For all these applications, the investigation of the structural and electronic properties of titanium carbide is of great importance. This research deals with a novel theoretical analysis, based on a self-consistent calculation using the linearized augmented plane wave method (LAPW). Our results is used to test the applicability of this method for studying related advanced ceramic materials (e.g. WC, TiN, TiB2, Si3N4, and ZrC.)

FIRST-PRINCIPLES CALCULATIONS OF OPTICAL PROPERTIES OF BULK SnTe

Z. Nabi and N. AmranePositron Physics Laboratory, Physics Department, University of Sidi-Bel- Abbes, 22000 Sidi Bel Abbes, Algeria.

The electronic structure, the charge-density distribution, the density of state and the total energy of SnTe in the rocksalt structure are studied by the self-consistent full potential linear-augmented-plane-wave method (FLAPW) within the local (spin) density approximation (LSDA). For the ground-state properties, the band structures, the equilibrium lattice constant, the bulk modulus and its derivative, are in good agreement with other recent calculations and with experimental data. In particular, the energy bands obtained are in very good agreement with the pressure dependence of the forbidden gap. Reasonably good agreement is obtained between our calculated effective masses and the experimentally determined ones. The linear optical properties of this compound are also calculated and compared with the available measurements. The calculated dielectric function is also in good agreement with the reflectance data.

ELECTRONIC AND OPTICAL PROPERTIES OF THE SERIES OF PbX COMPOUNDS

B.Abbar*, Z.Nabi*, N.Amrane*, B.Bouhafs§, A. Tadjer#, and H. Aourag#

* Positron Physics Laboratory, Faculté des Sciences, Université de Sidi-Bel-Abbes 22000.§ Computational Physics Laboratory, Physics Department, University of Sidi Bel-Abbes, Sidi Bel-Abbes 22000, Algeria.# Computational Materials Science Laboratory, Physics Department, University of Sidi Bel-

Abbes, 22000-Algeria.

Using the self-consistent full potential linear-augmented plane-wave method (FP-LAPW) within the local spin density approximation (LSDA), the electronic structures and the linear-optical properties of PbS, PbSe and PbTe are investigated. Results on band structures, and density of states are presented and compared. Optical properties of PbX (X=S, Se, Te) are calculated and the dielectric functions are resolved into components perpendicular and parallel to the z axis. The calculated results are compared with the available experimental data. The structural properties of the PbX are also studied by means of local-density total-energy calculations. It is shown that the calculated equilibrium volume and the bulk modulus are in good agreement with recent experimental data.

FP-LAPW Calculation of electronic and structural properties of TiC

S. Méccabih, Z. Nabi, B. Abbar and N. AmranePositron Physics Research Laboratory, Physics Department, University of Sidi-Bel-Abbes, 22000 Sidi-Bel-Abbes, Algeria.

We have studied the electronic properties of TiC by means of accurate first-principles total-energy calculations using the Full Potential Linear Augmented Plane Wave (FP-LAPW). The calculations are based on the density functional theory. The complete band structure and density of state of this compound have been shown. A good agreement with other workers was observed.

FP-LAPW CALCULATION OF ELECTRONIC AND STRUCTURAL PROPERTIES OF TiN

N. Benosman, Z. Nabi, B. Abbar and N. AmranePositron Physics Research Laboratory, Physics Department, University of Sidi-Bel-Abbes, 22000 Sidi-Bel-Abbes, Algeria.

We have studied the electronic and structural properties of TiN by means of accurate first-principles total-energy calculations using the Full Potential Linear Augmented Plane Wave (FP-LAPW). The calculations are based on the density functional theory. The calculated values for the equilibrium volume and bulk modulus are generally in good agreement with the available experimental data and other recent calculations.

ELECTRONIC STRUCTURE CALCULATIONS FOR TIO USING THE FULL POTENTIAL LAPW METHOD

F. Laksari, Z. Nabi, B. Abbar and N. AmranePositron Physics Research Laboratory, Physics Department, University of Sidi-Bel-Abbes, 22000 Sidi-Bel-Abbes, Algeria.

The class of refractory transition metal compounds is of great interest both in technology and in theory. This is because they exhibit an unusual combination of physical and chemical properties. In the present work we have performed the self-Consistent ban,d structure calculations for TiO using the linearized augmented plane wave method (LAPW) which has proven to be one of the most accurate methods for the computation of the electronic structure of solids within density functional theory.

OPTICAL AND ELECTRONIC PROPERTIES OF SiO2.

N. Abbouni, Z. Nabi, B. Abbar and N. AmranePositron Physics Laboratory, Djillali Liabes University.

The electronic structure and density of states have been calculated using the full potential linearized augmented plane wave method. Total and partial densities of states, as well as electron densities are presented and discussed in context with available theoretical data. Compared with other calculations good agreement was observed.

COMPARATIVE ANALYTICAL STUDIES OF PARABOLIC AND RECTANGULAR QUANTUM WELL BASED ON Si/SiGe

A. Benchikh, N. AmranePositron Physics Research Laboratory, Physics Department, University of Sidi-Bel-Abbes, 22000, Algeria.

Les techniques modernes de croissance des cristaux semi-conducteurs que sont l ’épitaxie par jet moléculaire (MBE) et le dépôt en phase vapeur a partir d'organo-métallique (MOCVD), permettent de réaliser des hétérostructures constituées par la juxtaposition de couches de matériaux différents. Leurs propriétés très intéressants sont techniquement riches de promesses. Notre étude consiste à faire un calcul analytique au centre de la zone de Brillouin dans la direction longitudinale avec approximation de la masse effective sur les structures non contraintes de type I de potentiel rectangulaire et parabolique à base de Si/SiGe. Les résultats obtenus montrent l ’évolution des états confinés des sous-bandes de valence et de conduction et la distribution de la densité de probabilité.

QUANTUM MONTE CARLO INVESTIGATION OF EXCHANGE AND CORRELATION IN SILICON

A. Kellou and N. Amrane

Positron Physics Laboratory, University of Sidi Bel Abbes.

The exchange and correlation energy of silicon is investigated with quantum Monte Carlo method. The Standard tool computational of electronic structure theory for solids is the local density approximation (LDA), within density functional theory (DFT). This has been applied successfully to systems, including those with quite rapidly varying densities, even though the LDA is based on approximating the system as locally homogeneous. However, when discrepancies between experiment and theory in solids arise it is difficult to improve upon the LDA systematically, although several schemes have been devised. In this paper, we compare our QMC calculations with those obtained from LDA and ADA (average density approximation) calculations. There are tow zero-temperature methods used in this work, variational Monte Carlo (VMC) and diffusion Monte Carlo (DMC), both based in stochastic schemes to sample the total wave function of the system. We review the coupling-constant-integrated pair correlation function, the exchange correlation hole, and the exchange-correlation energy density of diamond structure silicon. Finally, QMC results have corrected the LDA errors and are less sensitive to numerical noise, which appear in the exchange and correlation densities, QMC methods are thus immediately applicable to solids, molecules and atoms with appropriate wave function and exchange correlation functional.

InxGa1-xN STRUCTURE REFRACTIVE INDEX CALCULATIONS

M. Annani1, Z. Chama1, M. Khadraoui1, B. Bouhafs2 and N. Amrane3

1 Laboratoire de Modélisation des Composants et de Conception des Circuits, Institut d'Electronique.2 Computational Physics Laboratory, Physics Department, University of Sidi Bel-Abbes, 22000-Algeria.3 Laboratoire de Physique des Positrons, Institut des sciences Exactes. Université Djillali Liabes de Sidi-Bel Abbès. BP89,22000 Sidi-Bel Abbès. Algeria.

Keywords: III-N semiconductors, Crystal growth, Refractive index, Empirical models.The growth of InxGa1-xN wurtzite structure is a well-established fact, in order to develop optoelectronic laser or LEDs, from the near ultraviolet to the light spectrum. This sweeps practically the whole of the visible spectrum and thus is very useful in actual development of rather liquid crystal displays screens. Nevertheless, refractive index of InxGa1-xN structure has not, at our knowledge, been investigated. These index are going naturally from the GaN index to the InN one, with , therefore a bowing due to the lattice mismatch between these two constituting binary alloys. The index in a certain range is less than the GaN one.

REACTIVE OXYGEN SITES AT THE (001) V2O5 SURFACE

Christian Mathieu*, Brahim Khelifa*, Adlane Sayede1 and Hafid Aourag1.* Université d'Artois - Faculté Jean Perrin - SP18 - 62307 Cedex - France.1 Computational Materials Science Laboratory, UDL Sidi Bel Abbes 22000 - Algérie.

Keywords : Vanadium oxide, scanning probe microscopy, quantum chemical caculation. The role of the three of oxygen present at the (001) V2O5 surface: vandyl oxygen atoms O1coordinated only to one vanadium atom, O2 and O3 coordinated to two or three vanadium atoms respectively, is discussed through expirimental results and chemical calculations.

THE CALCULATION OF ELECTRONIC PROPERTIES OF FeSi2 AND FeSi

A. Laref and H. AouragComputational Material Science Laboratory, University of Sidi-Bel-Abbès, 22000 Algeria

Mettalic silicides play an increasingly important role in the fabrication of microelectronic devices, due to their large compatibility with silicon integration technology. In the past five years, however, particular attention has been devoted to iron silicides, since there exists one semi-conductor stable phase, namely FeSi2, which could be employed for optoelectronic devices. We present in this communication the electronic properties of metallic FeSi and of FeSi2 in the calcium-fluorite structure.

OSCILLATING, DECAYING, AND COLLAPSING SOLITONS IN THE GENERALIZED NONLINEAR SCHRÖDINGER EQUATION

R. Moussa, S.Goumri-Said, and H.AouragComputational Materials Science Laboratory, Physics Department, University of Sidi Bel-Abbes, 22000-Algeria.

We have investigated numerically the long -term dynamics of unstable solitons in the generalized nonlinear Shrödinger (NLS) equation. An analytical model for the instability-induced evolution of the soliton parameters is derived in the framework of the perturbation theory, which is valid near the threshold of the soliton instability. As an exemple we analyze solitons in the NLS-type equation with two power-law nonlinearities.

MOLECULAR DYNAMICS SIMULATION OF CuI USING A THREE-BODY POTENTIAL

W.Sekkala, A. Zaouib, A. Larefa, M. Certierb and H. Aouraga

a Computational Materials Science Laboratory, Physics Department, University of Sidi Bel-Abbes, 22000-Algeria.b L. P. L. I., 57078-Metz Cedex 3 France.

Three-body potential coupled with molecular dynamics method have been used to simulate structural properties of CuI in the zincblende and tetragonal phases. It is found that the diffusion constant is well reproduced for the (-phase of CuI using this model rather than two body potential. This study predicts also the presence of cation disorder at elevated temperature within the tetragonal phase of CuI.

DEVICE MODELING OF LIQUID CRYSTAL DISPLAY AND

APPLICATION.

D. Sari, H. AouragComputational Materials Science Laboratory, Institut des Sciences Exactes. Université Djilali Liabes B.P, 22000, Sidi Bel Abbes.

Many kinds of liquid crystals modes have been considered by using various types of liquid crystals, their surface alignments and optical effects. Among these modes, the twisted nematic mode ( TN-mode) is most widely used, so that fundamental device modelling of this display is discussed on surface treatments of substrates, and on design condition of material and device parameters. In this paper, the author will focus the discussion on liquid crystal device itself. The application of a liquid cell is proposed.

STUDY OF ELECTRONIC, ELASTIC, STRUCTURAL AND THERMODYNAMIC PROPERTIES OF CdTe AND ZnTe

A. E. K. Merad1, M. B. Kanoun1, A. Laref2, W. Sekkal2, H. Aourag2 and G. Merad1

1 Laboratoire de physique des Matériaux Solides, Département de Physique, Faculté des Sciences, Université A.Belkaid de Tlemcen, BP.119, Tlemcen 13000, Algérie2 Computational Materials Science Laboratory, Physics Department, Faculté des Sciences, Université of Sidi-Bel Abbès, Sidi-Bel Abbès 22000, Algérie.

The II-VI compounds and their alloys exhibit many interest in various domains, such as optoelectronic applications, physics of surfaces, interfaces and superlattices. The goal of our communication is to calculate the different properties of CdTe and ZnTe using two different methods. In the one hand, we use of calculation which is the Tight-Binding Method (TBM) to obtain the electronic and elastic properties introducing two models: The Bond-Orbital Model (BOM) and the Extended Huckel Tight-Binding (XHTB) method. In the other, we use one method of simulation which is the molecular-Dynamics (MD) to obtain the structural and thermodynamic properties of CdTe and ZnTe. In this simulation the empirical Tersoff potential is applied. Comparing our results to the theoretical and experimental values, we suggest that we have a very well agreement which gives an importance to our work.

TIGHT-BINDING CALCULATIONS OF II-VI COMPOUNDS

A. E. K. Merad 1 , A. Laref2, H. Aourag2 and G. Merad1

1 Laboratoire de physique des Matériaux Solides, Déepartement de Physique, Faculté des Sciences, Université A. Belkaid de Tlemcen, BP.119, Tlemcen 13000, Algérie2 Computational Materials Science Laboratory, Physics Department, Faculté des Sciences, Université of Sidi-Bel Abbès, Sidi-Bel Abbès 22000, Algérie.

The II-V semiconductors and their alloys are very important materials. For example, in optoelectronic applications and in substitution phenomena. The aim of our work is the calculation of electronic, optical and elastic properties of CdTe and ZnTe using the Tight-Binding Method (TBM). In this communication, we present calculations of energy band structures, densities of states, other electronic properties as the polarity (p , the metallicity (m , the transverse effective charge and optical properties as the refractive index n and the dielectric susceptibility (1 . These properties are obtained by Empirical Tight-Binding Model (ETBM) using the sp3s* basis of states and the Bond-Orbital Method (BOM). This method can be extended to the calculation of elastic properties as the bulk modulus B, and elastic stiffness constants C11 , C22 and C44 using the extended Huckel Tight-Binding (XHTB) method. Our results are compared to the theoretical and experimental values which give a good agreement and suggest the worth of our work.

THEORETICAL STUDIES OF POSITRON ANNIHILATION IN GaAlN AND GaInN ALLOY SYSTEMS

F. Benkabou , and H. AouragComputational Materials Science Laboratory, Physics Department, University of Sidi Bel-Abbes, 22000-Algeria.

Angular correlation of positron annihilation radiation (ACAR) along different crystallographic direction in GaAlN and GaInN systems is calculated. It is observed that the electron positron momentum density increases rapidly with increasing Al and In content. The computational technique used here is based on the independent-particle model (IPM) coupled with the use of the electron pseudo wave function and the virtual crystal approximation (VCA) .

DIELECTRIC PROPERTIES OF ZINC BLENDE GaN, InN AND AlN UNDER STRAIN

A. Tadjer*, M.Rezki*, B.Abbar**, and H. Aourag*

* Computational Materials Science Laboratory, University of Sidi-Bel-Abbes.** Positron Physics Research Laboratory, University of Sidi-Bel-Abbes.

An empirical pseudopotential method is used to investigate dielectric properties of strained and unstrained zincblende GaN, InN and AlN. Inducing strain in semiconductors is a widely used method for engineering band discontinuities in lattice matched heterojunctions. Strain effects on these optical and electronic properties such as densities of states and the imaginary part of the dielectric function are elucidated. The results show that the bandgap increases with strain, there is a big shift in the energy position of the peaks of ( (() as strain increases. The investigation will be useful for bandgap engineering and the design of lattice mismatched heterostructure optoelectronic devices on these materials in the UV to orange light range application.Keywords: Pseudopotential, Nitride based semiconductors, Dielectric Properties, Density of States, Strain.

PROPRIETES ELECTRONIQUES, OPTIQUES ET STRUCTURALES DU SiC ET GeC

S. Ait Abderrahmane and H. AouragComputational Materials Science Laboratory, Université Djillali Liabes de Sidi Bel Abbès.

Bien que les Composés semi-conducteurs IV-IV tels que SiC , SiGe et GeC promettent un bel avenir technologique, ils ne jouissent pas d'une grande attention comme celle accorde aux matériaux semi-conducteurs élémentaires (Si, Ge et C). Récemment une attention particulier a t porte sur le carbure de silicium (SiC). Beaucoup d ’études et d'investigations ont t faites et SiC est devenu un composé familier dont on connaît actuellement grand nombre de propriétés. Un autre composé IV-IV non moins intéressant est le composé hypothétique GeC. Des investigations sur ce composé viennent d ’être entreprises, aussi ses propriétés demeurent encore inconnues. Dans ce travail, nous commençons par calculer les structures de bandes et les densités de charges du SiC et du GeC en utilisant la méthode du pseudopotentiel empirique et la méthode tight-binding. Nous trouvons que le GeC, tout comme le SiC, est un semi-conducteur large bande interdite et gap indirect. La densité de charge révèle que le GeC est plus ionique que le SiC. Nous avons calcul un autre concept intéressant l'ionicité : la charge effective transverse e*T. Le calcul a montre que le GeC possède une charge effective transverse plus élevé que celle du SiC. Par conséquent, nous déduisant que le GeC a une activité infrarouge plus prononce. Peu de relations empiriques relient l'indice de réfraction '' n '' l ’énergie gap d'un grand nombre de semi-conducteurs. Dans nos calculs nous utilisons une expression linaire de l'indice de réfraction. Les résultats obtenus concordent bien avec les résultats d'autres auteurs. Une

deuxième partie de ce travail est consacré au calcul ab-initio pour déterminer les propriétés d ’équilibre du SiC et du GeC, c'est dire, l ’énergie totale, la constante du réseau, le coefficient de compression et sa drive, la structure de bandes, la densité de charge et le facteur d'ionicité des liaisons chimiques. Plus loin, nous calculons les paramètres de Grneisen, la chaleur spécifique volume constant et le coefficient de dilatation thermique. Finalement, les résultats obtenus seront discutés et, par convenance, comparés aux résultats des autres auteurs.

THE IONICITY CHARACTER OF III-V COMPOUNDS UNDER PRESSURE EFFECT

Y. Al-Douri, H. Abid, and H. AouragComputational Materials Science Laboratoire, Physics Departement, University of Sidi Bel Abbes.

An application study of the ionicity as a function of hydrostatic pressure for InSb, InAs and InP has presented. This factor has been calculated by means of our model. The structural phase transition can be seen easily from behavior of the bonding character. The results are compared with the theoretical and experimental data are in reasonable agreement

ANOMALOUS BEHAVIOR IN THE PHYSICAL PROPERTIES OF BORON COMPOUNDS

Bachir Bouhafs* and Hafid Aourag#

* Computational Physics Laboratory, Physics Department, University of Sidi-Bel-Abbes, 22000-Algeria. E-mail: [email protected].# Computational Materials Science Laboratory, Physics Department, University of Sidi-Bel-Abbes, 22000-Algeria.

We have performed an ab-initio investigation for a series of boron compounds, BP, BAs, and BSb, and have compared their structural and electronic properties with those of c-BN. The calculations are performed using a planewave expansion within local density approximation and the pseudopotential approximation. Results are given for lattice constants, bulk moduli, band structures and band-gap pressure coefficients. The electronic properties of these compounds showed to have features that differ from those of other III-V materials. We found that the direct band-gap pressure coefficient in boron compounds is nearly independent on the anion substitutions. As a result, this trend is similar to the one caused by the cation substitutions in other zinc-blende compounds. This is another anomalous behavior which can be characterized by reversing the standard assignments for the anion and cation in these compounds.

CARACTRISATION DES TRANSISTORS BIPOLAIRES A BASE DE GaN

S. Mansouri, Z. Benamara, R. Brahimi, S. Nouar, B. CruzzaLaboratoire de Micro-Electronique Appliquée- Université Djillali Liabes.

GaN est un compos semiconducteur III-V grand gap (direct) qui prsente deux sortes d'applications dans le domaine de l'optolectronique o des travaux ont abouti la commercialisation des dispositifs tel que les diodes lectroluminescentes mettant la limite du violet et l'ultraviolet ainsi que dans le bleu. Ces rsultats ont pouss beaucoup de chercheurs orienter leurs travaux dans la micro-lectronique en ralisant des transistors base de GaN dont les premiers rsultats ont montr une bande passante nettement suprieur celle des transistors classiques d'o leurs introduction dans les systmes de communication et de radars. La caractrisation de ces transistors a montr que leurs performances restent toujours limits cause du dopage de la base, pour parer ce problme techniques de dopage avec d'autres types de dopants sont en mesure d' apporter la solution.

MONTE- CARLO CALCULATIONS OF KEV POSITRON SLOWING DOWN IN SOLIDS

Z. BousahlaPositron Physics Laboratory, University of Sidi Bel- Abbes, 22000-Algeria.* Computational Materials Science Laboratory, Physics Department, University of Sidi Bel- Abbes, 22000-Algeria.

A Monte- Carlo simulation method is used to investigate positron slowing down in Aluminum, Silicon and Germanium. Elastic scattering is based on the screened Rutherford differential cross section and inelastic processes are described by Gryzinski's semiempirical expression for each core and valence electron excitation. The parameters of mean penetration depth and implantation profile in GaAs are also predicted.

CREUSEMENT THERMIQUE DANS LES COUCHES MINCES: APPLICATION DU MODELE DU CREUSEMENT THERMIQUE A UNE

COUCHE MINCE DE SILICIUM POLYCRISTALLIN.

N. Benkhettou, B.Soudini & D.RachedLaboratoire de modélisation et de caractérisation des semi-conducteurs, Institut d'Electronique, Université Djillali Liabs Sidi Bel Abbès (22000).

On a applique le modèle de creusement thermique de surface dans le voisinage d'un vertex (intersection de trois joints de grain) une couche mince de silicium polycristallin afin de modéliser les phénomènes de formation de trous sous l'hypothèse que les propriétés de surface soient isotopes. Les résultats montrent que la forme de la surface est indépendante du temps et du que ses dimensions sont linéairement proportionnelles t1/4 pour un angle quelconque la racine du sillon thermique, le calculs montrent que lorsque l'angle ( (l'angle compris entre deux joints de grain) diminue, la vitesse de pénétration du puits augmente et que le puits thermique creuse bien plus rapidement que le sillon thermique.

APPROCHE DE LA PROBLEMATIQUE DU NON-LIQUIDE DE FERMI EN DIMENSION UN AU MOYEN DES THEORIES CONFORMES

M. Doui-Aici, B.soudini & H.AbidLaboratoire de Sciences des matériaux, Institut d'Electronique, Université de Sidi-bel Abbès, Algérie.

Anderson a conjectur que la phase normale des supraconducteurs hautes température critique pourrait être un non-liquide de Fermi bi-dimensionnel. Il est donc intéressant de bien comprendre le cas unidimensionnel, en particulier, afin de savoir quelles quantités physiques testent vraiment le caractère non-liquide de Fermi, ou de tester la robustesse de ces phases différents types de désordre. Plus formellement, il est intéressant de disposer d'un exemple relié aux théories invariantes conformes bi-dimensionnelles car on dispose alors d'un modèle exactement soluble et on peut espérer des dérivations simples et élégantes qui s'appuient sur la puissances des méthodes bi-dimensionnelles.

STORED CHARGES ANALYSIS IN STRUCTURES OF FOUR-LAYER

A. HalloucheInstitut d'Electronique, Université de Sidi-Bel Abbès.

Actually, at this phase of research on the optimization of power component, we are oriented to the realization of the structure able to work at very frequencies than those allowed by the old generation. The new structure of the actual generation had permitted to have less losses due mainly to the residual current.

ETUDE DE L'EVOLUTION DU NIVEAU DE FERMI SUPERFICIEL A L'INTERFACE DES DIODES SCHOTTKY Al/GaAs

H. Mazari*, Z. Benamara*, N. Bachir Bouiadjra*, O. Bonnoud**

* Laboratoire de Microlectronique Appliquée, Université Djillali Liabs de Sidi Bel Abbès, Sidi-bel Abbès (22000) , Algérie** Groupe de Microlectronique et Visualisation, UPRESA-CNRS 6076 Campus de Beaulieu, Bt.11B, F-35042, Rennes cedex, France.

L'arsniure de gallium possède des propriétés optiques bien supérieures celles du silicium. Grâce ces propriétés, on peut envisager l'intégration de fonctions électroniques et optiques sur le même substrat. Cependant, les interfaces réalises entre l'arsniure de gallium et ses oxydes naturels, les isolants ou les métaux demeurent de mauvaise qualité. On cherche donc des moyens de passive la surface d'arsniure de gallium. Heller a propos de traiter chimiquement cette surface par des sels de Ruthnium. Ce traitement améliore en effet les performances des piles photoélectrochimiques l'arsniure de gallium. Heller interprète ce phénomène en suggérant qu'il est d une diminution du nombre de défauts électroniques actifs l'interface. Une explication alternative est fournie par Aspnes qui considère que la variation de la position du niveau de Fermi superficiel est la cause de ce phénomène. Notre étude va dans ce sens. Nous avons déterminer la position du niveau de Fermi sur des diodes Schottky, base d'arsniure de gallium trait au Rthunium.

STRUCTURAL AND THERMODYNAMIC PROPERTIES OF ZINC-BLENDE ZnSe BY MOLECULAR DYNAMICS SIMULATION

F. Z. AoumeurPositron Physics Laboratory, Physics Dpartement, University of Sidi Bel Abbès 22000, Algeria.

Structural and thermodynamic properties of structure zinc-blende ZnSe are studied by molecular dynamics simulation and calculated within the Tersoff potential model. The lattice constant, the cohesion energy, bulk modulus and its derivative are obtained. The thermal expansion coefficient is studied in the temperature range from 300 to 900 K, and the specific heat at constant volume is also calculated using the Tersoff potential. The results obtained are compared with other calculations within the local approximation (LDA).

L'EFFET DES PIEGES SUR LES CARACTRISTIQUES ELECTRIQUES DES DIODES SCHOTTKY Au/InP (100) ET

Au/InSb/InP(100)

B. Akkal*, Z. Benamara*, A. Bouzidi*, L. Bideux**, B. Gruzza**

* Laboratoire de Micro-lectronique Applique- Université Djillali Liabes.** Laboratoire des Sciences des Matériaux pour l'Electronique et d'Automatique, Université Blaise Pascal de Clermont II, Les Czaux, 63177 Aubire Cedex, France.

Dans ce travail, nous étudions l'effet des piges d ’électrons et de la densité d ’états d'interface sur les caractéristique et les paramètres électriques des diodes Schottky Au/InP (100) et Au/InSb/InP (100) o l'InSb est une fine couche de restructuration permettant de bloquer la migration d'Indium en surface. Pour cela, nous mesurons les caractéristiques courant-tension capacit-tension des diodes avec et sans restructuration. Nous proposons ensuite d'analys la qualité électrique des composants élaborés après la création d'interfaces Au/InP(100) sans recuit puis avec recuit de la surface du substrat une température de chauffage de 300C. La densité d ’états d'interface moyenne est valu base d'analyse des caractéristique I(V) et C(V) 4.23x1012 eV-1 cm-2 et 4.42x1012 eV-1 cm-2 pour les diodes Au/InP(100) et Au/InSb/InP(100) recuit 300C respectivement. Le présence de la densité d ’états d'interface est responsable de la non-linéarité de la caractéristique I(V), de même la non-linéarité de la caractéristique C-2(V) est due la présence des niveau pige de type donner. La caractéristique C(V) est contrôlée par deux niveaux donneurs localisés 0.78 eV et 1.1 eV au-dessous de la bande de conduction pour la diode Au/InP(100).

ETUDE PAR LA METHODE DE LA DYNAMIQUE MOLECULAIRE DE DETECTEURS OPTOELECTRONIQUES DANS L'INFRAROUGE A

BASE DU SixGe1-x et du SiGe

S. Berrah, M. DrizLaboratoire de Modélisation et Caractérisation des Semi-Conducteurs Institut d'Electronique, Université Djillali Liabes, Sidi-Bel-Abbès, Algérie.

Les éléments du groupe IV C (diamant), Si, Ge,-Sn et leur composés (SiGe, SiC, SixGe1-x , SixC1-x ) sont la base de la micro-électronique. Leurs principaux avantages sont : la miniaturisation des circuits et l'accroissement de vitesse de fonctionnement. La détermination expérimentale des différentes propriétés physiques de ces composés reste toujours complique et difficile aux laboratoires. Par ailleurs, la simulation numérique nous permet ainsi de les déterminer. La dynamique moléculaire est l'une des principales méthodes classiques utilises dans l ’étude des différentes propriétés physiques ( structurales, thermodynamiques et dynamiques). Son principe consiste générer des trajectoires de phase en résolvant les équations de mouvement et de les analyser dans l'espace de phase. L'avantage d'une telle méthode par rapport aux autres telles que la Mont Cargo (minimisation de l ’énergie ) est de nous permettre d'investir les propriétés dynamiques et suivre l ’évolution du système au cours du temps. Le potentiel utilisé ici est le potentiel de Tersoff qui décrit mieux les interactions atomiques dans les éléments IV. Notre simulation a t porte sur les propriétés dynamiques en vu de déterminer la densité des phonons.

ANALYSIS OF THE DEGRADATION ON THE EXTERNAL SURFACES OF THE POLYMER MATRIX COMPOSITE BY THE

OPTIMIZATION OF THE FIBBER ORIENTATION

Bedia Adda1, A. Tounsi1, Z. Sereir1, B. Boucham1 and H. Houari21

Laboratory of mechanical and material, University of Sidi Bel Abbes, 22000, Sidi Bel Abbes, Algeria2 Laboratory of materials and catalysis, University of Sidi Bel Abbes, 22000, Sidi Bel Abbes, Algeria.

Key words : Degradation, Fiber orientation, Moisture content, Polymer matrix, Composite, Residual stresses.This paper presents and illustrates a method to minimize the degradation on the external surfaces of the polymer matrix composites exposed to the air. The effect of the orientation of the reinforced fibbers begets a fluctuation and a variation of the values of the no-mechanical stresses which contribute to a phenomena of the degradation of the laminated composites.Our main objective in this part of the work is to study the evolution of the moisture content c(x,t) in the composite material. It can be done with a one-dimensional Fikian problem with a diffusivity D and a moisture content C using the finite elements method.The second step is using the TSAI's method for computing the residual stresses due to the diffusion moisture.Finally, in order to avoid a quickly degradation of the composite material, the study of the variation of the residual stresses versus the time and the fibber orientation gives us an

evaluation of the optimal angle. This work represents an attempt to minimize the influence of the fibber orientation on the degradation of the laminated composites. It was shown a characteristic solution to the phenomena of the degradation of the composite material. Our solution with our method have assesses its validity and demonstrated its higher efficiency. Thus all significant features of long-term behavior are readily obtained by the present method, which can help the lifetime studies for structural parts of the polymer matrix composite.

A MODEL FOR ANALYZING THE INTERFACE STATES EFFECT OF A MOS STRUCTURE.

H. Dib1, Z. Benamara1, A. Boudissa1, F. Raoult2, and O. Bonnaud2

1 Laboratoire de micro-électronique applique, Université Djillali Liabes, Sidi Bel Abbes, 22000, Algeria.2 Groupe de micro-électronique et Visualisation, CCMO-URA CNRS 1648, Université de Rennes I, Campus de Beaulieu, 35042, Rennes Cedex, France.

In order to analyze the traps states density effect on metal/oxide/polysilicon structure, we simulate the electrostatics potential distribution and C(V) curves for different densities of interfaces states at Si/SiO2 interface and the traps states at grains boundaries in the range of 0 to 1013 cm-2. The layer of polysilicon is mobilized by three rectangular crystallite of monosilicon separated by the identical grain boundaries parallel to the SiO2 /polysilicon interface. The results shown that the electrostatic potential distribution present a barriers at the grains boundaries and Si/Sio2 interface. These barriers height increases with the increasing of the traps and interface states densities. The calculated C(V) curves show that the increase of the traps states densities at grain boundaries causes an increase of minimal capacitance value and a transition toward positive voltage. Note that the opposite effect is true C(V) characteristics are similar at the accumulation and inversion region for the tow case.

EFFECT OF GRAIN SIZE AND GRAIN BOUNDARIES STATE DENSITY IN POLY-Si(N+)/C-Si(P) SOLAR CELL USING FIRST-

PRINCIPLES COMPUTER MODELING

B. Zbentout, H. Sehil, A. Joti, H. Dib, H. Boudiaf, Y. Bourezig and Z. BenamaraLaboratoire de Micro-Electronique Appliquée, Université Djillali Liabés Sidi Bel Abbès (22000), Algérie.

Recently, a particular interest is given to polysilicon material in terrestrial photovoltaic conversion devices as solar cells with weak cost and several structures have been studied to improve the out put parameters. The aim of this work is to test the theoretical predictions on our structure poly-Si(N+)/mono-Si(P) in particular the polysilicon front layer (thickness, grain size and the high density of trap states localized at the grain boundaries) and at poly-Si(N)/mono-Si(P) interface. The results showed that trap states localized at grain boundaries increase the speed of recombination that provokes a reduction of short circuit and open circuit voltage values.

Evaluation of The Size of The Plastic Zone in Mode I for Elasto-Plastic Behavior Material

M. Benguediab}, M. Belhouari, K. Madani and N. RanganathanInstitute of Mechanical Engineering, University of Sidi Bel Abbès BP89, Cité Ben M'hidi Sidi Bel Abbès, 22000 Algeria

During cracks propagation, it cornes up a high stress concentration in the immediate threshold of the crack. This results in an important plasticity in the zone localized at the threshold. In this plastic zone damage will comes up and result, in case, either to a sudden crack or a progression crack. The determination of the size of the plastic zone has been a subject of many studies. Our work consist in developing a computational code by finite elements in order to determine the size of the plastic zone under loading in mode I.The computations are made according to Von Mises and Tresca criteria, and the influence of thickness has been brought to evidence. The results obtained for the different samples were compared to those numerically estimated and experimentally measured.

STUDY AND SIMULATION OF THE SPECTRALLY RESOLVED (SI-SPL) SCANNING PHOTOLUMINESCENCE APPLIED TO InAlAs/InP

HETEROSTRUCTURE

H. Gharib1, T. Benbakhti1, M. Derras2

1 Laboratoire de Microscope Electronique, Institut d'Electronique Université Djillali Liabs BP, 89 Sidi Bel Abbès 22000 Algérie2 Centre de Dévelopement des Techniques Nucléaires (CDTN) N02 Boulevard Frantz Fanon Alger Gare 16002 G.G. Alger

In the research of components still more effective, different methods of analysis and characterization apt to provide information on critical and important parameters (resistivity, mobility and defects) have been developed. We used spectrally integrated (SI-SPL) and spectrally resolved (SR-SPL) scanning photoluminescence at room temperature for the study of the InAlAs/InP heterostructure. This technique of measure is a fast and non-destructive method permitting in practice a follow-up of the electronic properties. We present in previous, the complete theory permitting the description of photoluminescence spectra of compound semiconductor substrate. In this work, we applied this theory adapted to the InAlAs/InP heterostructure, while using a decomposition of the optical excitation bundle. We also simulated photoluminescence spectra and studied the influence of material parameters and optical excitation intensity, on the shape of spectra.

ETUDE DE L'AMORPHISATION DE LA SURFACE DE Si(111) PAR BOMBARDEMENT IONIQUE ET DE LA REORGANISATION PAR

RECUIT THERMIQUE

A. ChehebMaterials and components Physics Laboratory, University Djillali Liabes BP 89 22000, Algeria.

Les Pics basse énergie sont détectés par spectroscopie des électrons secondaires (SES) du cristal de Si(111). Ces pics traduisent des maxima de la densité des états inoccupés et correspondent des particularités du diagramme de bandes d ’énergie calcul pour le Si massif. Leur sensibilité, lorsqu'on étudie l'amorphisation d'une surface amorphe consécutive au recuit thermique, est démontre

ETUDE DE L'EFFET DE RESONANCE DANS LES STRUCTURES A EFFET TUNNELH. Khalfoun, F. Hamdache and N. Benharrats

LES ALGORITHMES REVERSIBLES DANS LE TEMPS ET LA DYNAMIQUE MOLECULAIREN. Tchouar

L'EFFET DE L'ATOME NEUTRE DE ZINC SUR LES PROPRIETES ELECTRONIQUES DES COUCHES D'OXYDE DE ZINCR. A. Rabadanov, T. Filiachi

EFFET DES PARAMETRES ELECTRIQUES DE LA JONCTION SUR LE VOLUME D'INTERACTION ELECTRON-MATIEREM. Derras, A. Kadoun, G. Bassou, H. Gharib

EVOLUTION D'UNE STRUCTURE DUAL-PHASE A PARTIR D'UN ACIER DISPERSOIDE X60S. Zidelmel & M. Hadji

Si-H THIN FILMS TRANSISTOR

M. Aida and M-F. MosbahUnité de Recherche de Physique, Université de Mentouri, Constantine 25000, Algérie.


Abstract:

not receved

FIRST-PRINCIPLES DETERMINATION OF Au-Ni PHASE DIAGRAM

R. HalimiUniversité de Constantine, Unit. de recherche de Physique des matériaux.


Abstract:

not received

HYDRODYNAMIC EFFECT OF RECTILING DISC ELECTRODE

D. AbdiUniversité de Setif, Algérie


Abstract:

not received

STUDY OF MESA 6H-SiC HIGH VOLTAGE RECTIFIERK. Gaffour

Département de Physique, Faculté des Sciences, Université A.Belkaid de Tlemcen, BP.119, Tlemcen 13000, Algérie


Abstract:

not received.

ELECTRICAL AND MAGNETIC COUPLING IN CERAMIC SUPRACONDUCTOR

A. KhalfiUniversité Djillali Liabes de Sidi Bel Abbès, Algérie.


Abstract:

The paper examines mechanisms which limit transport critical current in bulk ceramic YBa2Cu3O7-. Thermal effects at the current electrodes are first discounted by careful experimental design and protocol. Transport critical current measurements on bicrystals show attenuation dy the grain boundary. Following amodel due to dersh and blatter based on weak link behaviour the local critical current density depends on the local (self) field H in the cerami. The predicted dependence of Jc with sample cross section is tested with experimental data for small grain ceramic samples with significantly different microstructures. Finally in hollow cylinders application of an opposing magnetic field to H generated from current following along a centrally placed copper wire leads to an increase of the critical current.

LES FIBRES DE VERRE PARTICLARITES TECHNOLOGIQUES ET CONCEPTUELLES DES ENGINS MARINS

Dr. M. Khalladi (DRD-CFN, Algeria)

Abstract:

not received

CONSTRUCTION D’UNE SOLUTION POUR L’EQUATION DIFFERENTIELLE DE PAINLEVE

Prof. A. Bouabdellah (USTHB, Algeria)

Abstract:

not received

III-N MATERIALS FOR MICROSENSORS APPLICATIONS

Prof. A. Bensaoula (SVEC-NASA, USA)

Abstract:

not received

Abbar B. Organizer/ Participant Univ. of Sidi Bel AbbèsAbbouni N. Participant Univ. of Sidi Bel AbbèsAbdelmoula A. Visitor Univ. of Es-SéniaAbdi D. Participant Univ. of SétifAbid H. Visitor Univ. of Sidi Bel AbbèsAiad R. Visitor Univ. of BlidaAit Abderrahmane S. Participant Univ. of Sidi Bel AbbèsAit Kaci H. Participant Univ. of Es-SéniaAkkal B. Participant Univ. of Sidi Bel AbbèsAl-Dhafiri A. M. Guest Speaker King Saud University RiyadAl-Douri Y. Participant Univ. of Sidi Bel AbbèsAmrane N. President Univ. of Sidi Bel AbbèsAmriou T. Invited Student Univ. of Sidi Bel AbbèsAmroune A. Visitor Univ. of ConstantineAnnani M. Participant Univ. of Sidi Bel AbbèsAoucher M. Guest Scientist USTHBAoumeur F. Z. Participant Univ. of Sidi Bel AbbèsAourag H. Director of CRU Univ. of Sidi Bel AbbèsBadji R. Participant Univ. of BlidaBarhdadi A. Guest Speaker Rabat, MoroccoBassou G. Visitor Univ. of Sidi Bel AbbèsBedia Adda E. Participant Univ. of Sidi Bel Abbès

LISTE DES PARTICIPANTS

Behli S. Visitor CEA Belaidi A. Participant ENSET, OranBelarbi A. Visitor Univ. TiaretBeldi N. Visitor USTHBBelghobsi Z. Participant Univ. of ConstantineBelhadj M. Participant Univ. of Sidi Bel AbbèsBelhadji M. Visitor Univ. of Es-SéniaBelhakem M. Visitor Univ. MostaganemBenabed L. Visitor Univ. of Es-SéniaBenamara Z. Participant Univ. of Sidi Bel AbbèsBenazzouz C. Participant CEA Benbakhti T. Participant Univ. of Sidi Bel AbbèsBenchikh A. Participant Univ. of Sidi Bel AbbèsBenguediab M. Participant Univ. of Sidi Bel AbbèsBenhaliliba M. Participant USTOBenhelal O. Organizer Univ. of Sidi Bel AbbèsBenkabou F. Participant Univ. of Sidi Bel AbbèsBenkherourou M. Visitor Univ.of ConstantineBenkhettou N. Participant Univ. of Sidi Bel AbbèsBenmelouka Visitor USTOBenosman N. Organizer/ Participant Univ. of Sidi Bel AbbèsBenramdane N. Participant Univ. of Sidi Bel AbbèsBensaoula A. Participant SVEC-NASA, USABenyoucef B. Guest Scientist Univ. of TlemcenBenzair A. Invited Student Univ. of Sidi Bel Abbès

Berrah S. Participant Univ. of Sidi Bel AbbèsBlidi Boukamel N. Participant Univ. of Es-SéniaBouabdellah A. Guest Speaker USTHBBouafia M. Visitor Univ. of SétifBouarissa N. Guest Scientist Univ. of M'silaBouchaour Z. Participant Univ. of Es-SéniaBouchikhi A. Visitor Univ. of Sidi Bel AbbèsBoudissa A. Invited Student Univ. of Sidi Bel AbbèsBoudissa M. Participant Univ. of SétifBougoul S. Participant URTH-INRABougrioua F. Guest Speaker ELIS, Gent University - IMEC, BelgiumBougrioua Z. Guest Speaker INTEC, Gent University - IMEC, BelgiumBouhafs B. Organizer/ Participant Univ. of Sidi Bel AbbèsBoulma E. Participant Univ. of AnnabaBoumaaza A. Participant Univ. Center of Oum El BouaghiBoumedienne A. Visitor Univ. of BlidaBousahla Z. Participant Univ. of Sidi Bel AbbèsBousetta A. Guest Speaker KLA-Tencor Corporation, California, USA.Boussaa N. Visitor CEA Boutaleb H. Participant Univ. of Es-SéniaChaabane Sari N.E. Participant Univ. of TlemcenChahed A. Organizer Univ. of Sidi Bel AbbèsChaieb S. Guest Speaker Massachusetts Institute of Technology, Massachusetts, USAChaoui Z. Visitor Univ. of Sétif

Cheheb A. Participant Univ. of Sidi Bel AbbèsChemam F. Participant Univ. center of TebessaCherfi R. Visitor USTHBChikouche A. Guest Scientist CEAChitroub M. Participant Ecole nationale polytechnique, AlgiersDerbal M. Visitor Univ. of BlidaDerras M. Participant CDTNDiaf M. Participant Univ. of AnnabaDib H. Participant Univ. of Sidi Bel AbbèsDoui-Aici M. Participant Univ. of Sidi Bel AbbèsDridi Z. Participant Univ. of Sidi Bel AbbèsDriss-Khodja K. Guest Scientist Univ. of Es-SéniaDriz M. Visitor Univ. of Sidi Bel AbbèsEl-Mellouhi F. Invited Student Univ. of Sidi Bel AbbèsFarhi G. Participant USTHBFerhat M. Participant USTOFerrag M. Visitor Univ. of AnnabaFiliachi T. Participant Univ. of BiskraGaffour K. Participant Univ. of TlemcenGharib H. Participant Univ. of Sidi Bel AbbèsGoumri-Said S. Participant Univ. of Sidi Bel AbbèsGuittoum A. Visitor CEA Hadjar Y. Participant Univ. of BatnaHadjersi T. Participant Dev. and Tech. of Si Unit, AlgiersHadji M. Visitor Univ. of Blida

Halimi R. Participant Univ. of ConstantineHallouche A. Participant Univ. of Sidi Bel AbbèsHamdache F. Guest Scientist USTOHellal F. Guest Scientist ENP, AlgiersKacimi S. Guest Scientist Univ. of Sidi Bel AbbèsKadoun A. Visitor Univ. of Sidi Bel AbbèsKadri A. Guest Speaker CEAKandouci A. Head of UDL Univ. of Sidi Bel AbbèsKanoun M. B. Participant Univ. of TlemcenKassali K. Visitor Univ. of SétifKechouane M. Participant USTHBKellou A. Participant Univ. of Sidi Bel AbbèsKerkar M. Visitor Ecole nationale polytechnique, AlgiersKhaladi A. Participant CFNKhalfi A. Participant Univ. of Sidi Bel AbbèsKhalfoun H. Participant USTOKhelifa B. Guest Speaker Univ. of Artois, FranceKrallafa A. Guest Speaker Univ. of Es-SéniaKrim F. Participant Univ. of Es-SéniaLabbaci K. Participant Univ. of AnnabaLabbani R. Participant Univ. of ConstantineLaihem K. Participant USTHBLakdja A. Organizer Univ. of Sidi Bel AbbèsLaksari S. Participant Univ. of Sidi Bel Abbès

Laref A. Participant Univ. of Sidi Bel AbbèsLazreg A. Invited Student Univ. of Sidi Bel AbbèsLouhibi M. M. El. Organizer Univ. of Sidi Bel AbbèsM. Remram Participant Univ. of ConstantineMami Y. Invited Student Univ. of Es-SéniaMamoun A. Guest Scientist Univ. of Es-SéniaMansouri S. Participant Univ. of Sidi Bel AbbèsMattalah M. Participant Univ. of Es-SéniaMayoufi M. Visitor Univ. of AnnabaMazari H. Participant Univ. of Sidi Bel AbbèsMéçabih S. Organizer/ Participant Univ. of Sidi Bel AbbèsMedjahed A. Visitor Univ. of SétifMerad A. E. K. Participant Univ. of TlemcenMerad G. Participant Univ. of TlemcenMetadjer N. Participant Univ. of Sidi Bel AbbèsMokdad N. Participant Univ. of Es-SéniaMosbah M-F. Participant Univ. of ConstantineMouffak B. Organizer Univ. of Sidi Bel AbbèsMouheb Visitor USTHBMoussa R. Participant Univ. of Sidi Bel AbbèsNabi Z. Organizer/ Participant Univ. of Sidi Bel AbbèsNouiri A. Participant Univ. of ConstantineOuagued A. Visitor Univ. of MostaganemOuennoughi Z. Visitor Univ. of SétifOuld-Abbès A. Invited Student Univ. of Tlemcen

Rached D. Participant Univ. of Sidi Bel AbbèsRais A. Guest Speaker Univ. of Sultan Qaboos, Sultanate of OmanRerbal K. Invited Student Univ. of TlemcenRoula A. Participant C. U. JijelSaib S. Participant Univ. of M'silaSari D. Participant Univ. of Sidi Bel AbbèsSayede A. Organizer/ Participant Univ. of Sidi Bel AbbèsSekkal W. Organizer/ Participant Univ. of Sidi Bel AbbèsSellai A. Guest Speaker Univ. of Sultan Qaboos, Sultanate of OmanSemra L. Participant Univ. of ConstantineSérier A. Participant Univ. of Sidi Bel AbbèsSidoumou M. Participant Univ. of BlidaSmail T. Participant USTHBSoudini B. Visitor Univ. of Sidi Bel AbbèsTadjer A. Organizer/ Participant Univ. of Sidi Bel AbbèsTchouar N. Participant USTOTemmar M. Visitor Univ. of BlidaTizi S. Invited Student Univ. of Sidi Bel AbbèsYagoubi A. Invited Student Univ. of Sidi Bel AbbèsYagoubi B. Participant Univ. of MostaganemZaoui A. Invited Student Univ. of Sidi Bel AbbèsZbentout B. Participant Univ. of Sidi Bel AbbèsZedira H. Participant Univ. center of Oum El BouaghiZekri N. Guest Scientist USTOZellag S. Participant Univ. of Bejaia

Zellama K. Visitor USTHBZidelmel S. Participant Univ. of BlidaZilabdi M. Visitor CEA

PLAY

Center AdministrationCenter Administration

Center OverviewCenter Overview

Center ResearchCenter Research

UDLRC Administration

The CHANCELLOR A.Kandouci

DIRECTORH.Aourag,

DEPARTMENTS

A. Tadjer, Department of Studies

M.E.Louhibi, Department of Research

B.Djahed, Department of Public Relations

O.Benhelal, Department of Scientific Activities

UDLRC OverviewThe University Djillali Liabes Research Center (UDLRC) a National Science Foundation Center

for research, education, and industrial outreach in the pluridisciplinary fields.The Center is a consortium consisting of all the research laboratories of the University Djillali Liabes

of Sidi-bel-Abbes. In a highly interactive approach, physicists, chemists, material scientists, electrical engineers and Social researchers address fundamental questions and convey the knowledge gained

to the industrial and educational sectors.

The Center is the largest federally-funded university-based research effort. Established on May 1, 1999, contract on behalf of the consortium.

Scientists in organizations outside the Center can participate in research through short-term or sabbatical-type visits, subcontracts, or collaborative projects. Workshops highlight special topics

for experts > and bring potential practitioners and teachers up to date on recent developments.

The Center has achieved its goal of reaching national prominence in the any research field and as a resource for both individual researchers and technologists in this field, An active industrial

outreach program is in place, and collaborative programs on research, workshops and education are encouraged.

Physics Laboratories

Computational Materials Science Laboratory (Pr H.Aourag)

Computational Physics Laboratory (Dr B. Bouhafs)

Positron Physics Laboratory (Dr N.Amrane)

Mathematics Laboratories

Stochastic Processus Laboratory (Dr B. Chouaf)

Mathematics Laboratory ( Dr M. Mechab)

Differential Equations Analysis Laboratory ( Mr A.Lakmeche)

Fonctionnal Analysis Laboratory (Dr M. Hamoudi

Chemistry Laboratories

Polymers Chemistry Laboratory ( Pr A.Mesli)

Organic Chemistry Laboratory ( Pr S.Taleb)

Catalysis Laboratory ( Dr A. Benghalem)

Materials Science Laboratory ( Dr A.Leboukh)

Electronics

Applied Microelectronics Laboratory ( Dr Z.Benamara)

Semiconductors Physics and Devices ( Dr N.Benramdane)

Signal and Systems Laboratory ( Dr A.Djebbari)

Computational Materials science Laboratory

DirectorH. Aourag

MembersA. Tadjer, F. Benkabou, R. Moussa, W. Sekkal, A. Laraf, O. Benhelal,

A. Sayede, A. Lakdjaa, S. Goumri, N. Metadjer, F. El Malouhi, M, Belhadj.

ProjectsStudy of electronic, structural and optoelectronic properties of nitride

based semiconductorsGap photonique

Semiconductors Materials Laboratory

DirectorH. Abid

MembersB Doudini, Z Bensaad, K Benkabou, M Rabah,

Y Aldouri, B Daoudi, M Benhammou, Z Chellahi.

Projects Etude des propriétés électroniques et optiques des semiconducteurs et leurs alliages .

Etude des propriétés électroniques et optiques de supraconducteurs par la méthode LAPW

Materials Mechanics Laboratory

DirectorA. Adda-Bedia

Members M Bounzef, A Tounsi, F B Boukhoulda, M Benguediab

ProjectsComportement en fatigue des matériaux

Caractéristiques des matériaux composites

L. G. R. E. S.

Director A. Kandouci

MembersB. Djahed

Projects

Positron Physics Laboratory

DirectorN. Amrane

MembersB. Abbar Z. Nabi

S. Mecabih N. BenosmanA. Bencheikh M. Maachou

N. Abouni A. ChahedA. Kellou S. Laksari

ProjectsEtude de la matière par les positrons

Electronic Microscopy Laboratory

Director G. Bassou

MembersT Benbakhti, A Kadoun, M Beghdad, D Mehal

Projects.Caractérisation des matériaux par microscopie EBIC, Corrélation avec d’autres techniques

Etude expérimentale des propriétés électroniques et optiques de matériaux semiconducteurs en d’applications dans les technologies avancées

Computational Physics Laboratory

DirectorBachir Bouhafs

MembersA. Benzair S. Mansouri

A. Lazreg Z. DridiT.Amriou A.Zaoui

Projects

Computational Physics Laboratory

DirectorBachir Bouhafs

MembersA. Benzair S. Mansouri

A. Lazreg Z. DridiT.Amriou A.Zaoui

Projects

Schocastic Models Laboratory

DirectorB. Chouaf

MembersA Gheriballah , A Laksaci), F

Tebboune), A Yousfate, N Ziane

ProjectsProcessus Ponctuels Périodiques. Modélisation par files d’attente

Quality and Managment Laboratory

DirectorM. Dani El Kebir

MembersM. RemaounB. Dahmani

L. Baba Ahmed

Computational Semiconductor Science Laboratory

DirectorM. Driz

MembersA Joti(3), N Benkhettou(3), D Rached(3),R BORSALI(3).

Projects.Modelisation of physical and electronic properties of semiconductor devices

“ Injection techniques of carriers

Intelligent Circuit and Systems Laboratory

DirectorDr M. Larbi-Boudhir

MembersA Miloua,A Tou, M Remaoun, R Nourine, Y Chafi (3).

Projects .Conception d’un système à base de connaissances à partir des images

satellitaires indéxées par contenu. Aide à l’interprétation et à la prise de décision

Electrical Energy Conversion and Control LaboraotryDirector

M.K. Fellah

Members S. Hadjeri M. Brahami S. Zidi A. Benaissa H. Sayah F. Gharbi

A. Meroufel

Projects.Méthodologie de conception et de synthèse des systèmes de conversion statiques “ Réseaux de transport et de distribution d’électricité et de l’environement ”

Economic Development Laboratory

DirectorMr B.Filali

MembersA Boucenda,F Fettat, E Salah

Projects Les apports en sociétés commercizales

Conccurence et protection du consommateur sur le plan administratif, juridique et associatif

Materials Science Laboratory

DirectorA. Khalfi

Members

A Aminallah, S Bellebia, A Leboukh, A Djedid

Projects

Synthèse , élaboration, densification et caractérisation des matériaux suppraconducteurs de type II et diélectriques pour résonateurs en hyperfréquences

Mathematics Laboratory

Director M. Mechab

Members Benchohra,M Tounsi, A Benaissa, F Derrab, N Amroun,K Guerbati, M O Baouche

Projects Analyse fonctionnelles appliquée à des problèmes physiques

Polymers Chemistry Laboratory

DirectorPr A. Mesli

MembersN. Chafi

M. Tabet-DrizD.MedineL. Belarbi

Projects .“ Synthèse, caractérisation et étude physico- chimique de polymères acryliques

et métaryliques fonctionnalisés Synthèse et caractérisation de nouveaux monomères fonctionnalisés

Popular Culture Laboratory

DirectorN. Sebbar

Members

Projects

Organic Chemistry Laboratory

Director S. Taleb

MembersD. Harrache

A. Addou

Projects

Public Law Laboratory

DirectorB.Tayebi

Members

Projects

Telecommunication & Signal Processing Laboratory

Director Mohamed Djebbouri

Laboratory members A Benaissa, Z Chama, Z Mahdjoub,

ProjectsDéveloppement d’un système à étalement spectrale à séquence directe.

Digital Television Laboratory

Director : Aoued Boukhlif

members A Azaiz, K Benchikh, A Meroufel,

projects Diffusion numérique de la télévision :Réalisation d’une chaîne

de télévision numérique

Applied Micro-electronic Laboratory

DirectorZ Benamara

members H Sehil, FS Bachir Bouiadjra, N Bachir Bouiadjra, B Akkal, M Chellali,

M Amrani, ST Boudissa, H Boudiaf, Y S Bourezig, H M Mansour, A Joti, B Zebentout.

projects Utilisation des semiconducteurs III-V dans les dispositifs électroniques

Caractérisation-Modélisation. Dispositifs électronique au silicium polycristallin. Elaboration, caractérisation et modélisation

Etude des échantillons à base de Gax Al1-x As- Spectroscopie électroniques, optiques et mesures électriques associées.

Materials & Devices Laboratory

Director N Benramdane

Members L Gaffour, A Cheheb, Z Zoubir, H Tabet-Derraz, A Bouzidi, M Latreche),

Projects Préparation et caracterisation de couches minces semi-conductrices par la méthode spray/

application aux dispositifs électroniques

Optical Communication & Micro-wave Laboratory

Director Rafaa Naoum

Laboratory members F Salah-Belkhodja, H Dib, K Khelil),

projectsSybthèse des méthodes d’analyse en optique intégrée. Application pour

la mise au point de nouveaux composants

Industrial Micro-computing & Electronic Laboratory

Director Mohamed El Hadi Louhibi

Laboratory members M N Rahmani, M Elarbi-A Benmansour

, A Rahmani, M Bentoutou, A Azaiz

projectsContrôle & Régulation des systèmes.

Components Modelization & Circuits Conception Laboratory

Director Rabéa Menezla

Laboratory members Z Bensaad, S Mansouri, M Anani

Projects Developpement d’un programme sur machine parallele pour la simulation 3D des mécanismes de transport dans les composantsà semi-conducteurs en présence

de centres profonds

Signals & Systems Laboratory

Director Ali Djebbari

Members A Bounoua, N Taleb, R Meliani, A Djebbari

A Azzedine,M Bouziani, SA Chouakri, H Bounoua.

Projects Developing new coding methods, implementation and reconstitution applied

to picture & sound

Materials & Catalysis Laboratory

Director S M Kacimi

Members A Benghalem, S Kacha), M Sebbane, B Mouffok, H Hireche, A Mahdad, Z Zizi

Projects Mise en valeur d’un materiau local ( benbonite) dans le traitement des eaux

usées industrielles et urbaines.Elaboration et caractérisation d’alumines pures. Effets des dopants

Valorisation des ressources minières locales ( argiles : type montmorillonite et benbonite,

dansl’épuration des eaux polluées par les rejets industriels).

Functional Analysis Laboratory

Director A Hammoudi

Members A Hakem, O Bouabdellah, B Chafi, M Mechab

ProjectsRésolution de problèmes sur des domaines à singularités coniques

.Etude des structures complexes des variétés homogènes

Differential Equations & Analysis Laboratory

Director A Lakmechei

Members A Belarbi, M Derhabi, M Lakrib, A Oumensour

Projects Mathématiques Appliqués à l’écologie et l’environnment

Network Information Systems & Engineering Laboratory

Director A Bouachria

Members M Malki, A Messabih, A Bensahla, Z Slama, M Arrar

Projects Nouvelle génération des bases de données

Genération architecture Client/serveur Retro-Ingénierie des bases de données : méthodologies et outils

Architecture & Control Laboratory

Director A Rahmoun

Members A Lehirèche, A Gafour, M Benmohammed, Z El Berichi

Projects Contrôle intelligent et systèmes

Soils & Structures Laboratory

Director A. Asroun

Members M E Driss, A Berrahou, H Kouider, B Bachir B

Projects Geotechnique réginale : Contribution à la conception de matériaux de construction et

de nouveaux systèmes constructifs . Rhéologie des fluides complexes, modélisation des écoulements et applications .

Geological & Mining Research Laboratory

Director L. Hamel

Members

M Benyahia, K Mouddene, M Bouklikha, K Boucenda

Projects Recherche de minérauc lourds valorisables, en particulier ceux de titane, dans les sables

noirs du littoral oranis ouest entre les caps sigale et figalo

Organism Biology & Populations Laboratory

Director S Moulessehoul

Members H Boudifa, A Benayad, Z Mehdadi, Z Benaouda

Projects Etude hydrobiologique de l’oued Mekkara en amont et

en aval de la station d’épuration, de la ville de Sidi Bel Abbès

Biochemistry Nutritional Laboratory

DirectorS Belbraouet

Members B Bouchikhi, M Benali, Kaddouri, T Zahzah

Projects Statut nutritionnelle des enfants et des personnes agées vivant dans la région

de Sidi Bel Abbès

Chemistry & Physio-chemistry Laboratory

Director B Benayad

Members R Mehraz, K Moussa, N Bestaoui

Projects Compsés à usage biologique et pharmaceutique .

Machines & Networks Laboratory

Director Y Ramdan

Members A Tilmatine, M Benabdellah, A Meroufel, A Hallouche, B Dehiba

Projects Stratégies de commande des machines électriques face aux interactions convertisseurs

-réseaux Séparation électriques des particules granuleuses

Energy Laboratory

Director M Amine Allah

Members L Hamadi, B Boutabout,M Makhlouf, A K Megueni N Mokhtari, A Lousdad,A Benazza, H M Medah, A Benaceur, M Fellah

Projects

Epidemic & Public health Laboratory

Director A Soulimane

Projects Santé des adolescents

Epidémiologie des cancers à Sidi Bel Abbès

Members Z Zouaoui, A tou, S Bradai, F Hellal

Ecosystem Management Laboratory

Director K Benabdelli

MembersB Benseddik, K Moueddene,B Djahed

Projects Analyse d’images satellites pour le suivi de l’évolution spatio-temporelle du couvert végétal :

cas de l’imgerie NOAA/AVHRR appliquée à l’ouest algerien . Le son de blé, valorisation et opportunités industrielles

Quantificationde paramètres stressants du blé dur dans les zones arides .

Management of Organisms Laboratory

Director A Bourahla

MembersM B Lebig, M Medjaoud, F Naimi

Projects Culture et management

Gestion de la consommation des eaux à Sidi Bel Abbès

Adaptation musicale:

LLakdja akdja AA/ / AAziz ziz Idée originale : Pr. Aourag Hafid. Idée originale : Pr. Aourag Hafid.

Conseiller technique: :

TTadjer adjer AAbdelkaderbdelkaderBBenhelal enhelal OOmar mar

Réalisation & Montage Vidéo::

Effets spéciaux:

SSayede ayede AAdlane dlane

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