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    Advanced

    Semiconductor

    Devices

    Lecture 1

    Advanced

    Semiconductor

    Devices

    Lecture 1

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    2 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Lecture outline

    Semiconductor Industry Status

    Semiconductor device history

    Moore's law

    Current industry trends portable devices

    Semiconductor physics electron wave properties

    Wave properties of matter

    Silicon atom, crystal, and doping

    Energy bands

    Effective mass Mass definition

    Relativistic particles

    Application to non-parabolic materials

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    3 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Basic electric switch/amplifier

    Vacuum tubes: Radio (1904)

    First semiconductor device patent: Julius E. Lilienfeld (1925)

    Working transistor:

    John Bardeen, Walter Brattain, William Shockley (1947)

    Integrated circuit: Jack Kilby (1958)

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    4 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    VLSI device structure

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    6 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    PC to Portable Devices

    IBM-PC (1981) vs Galaxy S3 (2012)

    Weight 200: 1

    Volume 1000:1 Cost 10:1

    Clock 1:100

    Price/Performance 1:1000

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    7/367 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Microprocessor to System-on-a-Chip Consumer demand

    Smartphones

    Digital cameras GPS devices

    Digital televisions

    Netbooks and Tablets

    Shift to complex semiconductor devices - SOCs

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    8/368 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Moore's Law (CPU transistor count)

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    9/369 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Optical Properties of Si

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    10/3610 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    CMOS Imager - Camera-on-a-Chip

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    11/3611 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Micro-ElectroMechanical Systems (MEMS)

    Pico-projector (2005)

    Motor

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    12/3612 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Semiconductor industry leaders

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    13/3613 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Wave properties of matter

    Young double slit experiment

    wave interference

    Particle interference picture wave properties of matter

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    14/3614 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Particle waves

    De Broglie hypothesis

    / 2

    E

    p m k

    w

    pl

    =

    = = =v

    h

    h h

    Standing waves quantum states

    22

    0

    , 1, 2, 3.....

    2n

    nk na

    nE

    m a

    p

    p

    = =

    =

    h

    Group velocity / /dE dp d dk w= =v

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    15/3615 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Particle waves 3d wave functions

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    Silicon Atom

    14 electrons occupying the 1st 3 energy levels:

    1s, 2s, 2p orbitals filled by 10 electrons

    3s, 3p orbitals filled by 4 electrons To minimize the overall energy, the 3s and 3p orbitals

    hybridize to form 4 tetrahedral 3sp orbitals

    Each has one electron and is capable of forming a bond

    with a neighboring atom

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    17 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Silicon crystal structure

    Diamond Cubic Lattice

    Each Si atom has 4 nearest neighbors

    Lattice constant = 5.431

    Si

    Si SiSi

    Si

    Si

    Si Si

    Si Si

    Si

    Si

    Si

    Si

    Si

    Si

    Si

    Si Si

    Si Si

    Si

    Si

    Si

    Si

    Silicon atoms share valence electrons to

    form insulator-like bonds.

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    18 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Silicon crystal doping

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    19 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Solution of wave equation energy bands

    Use parabolic E(k) near band minimum/maximum

    Model empty electron states at the top of the valence band

    as positive electric charges with positive mass - holes

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    20 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    A problem with effective mass

    The following effective mass concepts are often applied to

    semiconductor materials and devices Conductivity mass Density-of-states mass Hall mass Optical mass

    Cyclotron mass

    The traditional theoretical semiconductor effective mass

    does not lead to correct theoretical and experimental results for non-parabolic E(k) such as electron mass in HgCdTe and graphene

    2

    2 2/

    mE k

    h

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    21 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Definition of mass

    Assume that there is a given dispersion relationship E(k), which has

    wave solutions

    Assume that waves can form wave-packets with the group velocity

    defined as1

    v Ek

    = h

    Here k is the wave-vector, related to the lattice momentum in solid-

    state materials

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    22 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Definition of mass

    Lets assume that in semi-classical approximation we can identify

    particles with wave-packets satisfying De Broglie relation

    This leads to a unified theoretical definition of the effective mass

    vp m k= = h

    2

    /

    km

    E k=

    h

    Sometimes, this definition is called the optical effective mass

    However, we will demonstrate that this definition is quite general and

    can be applied to any parabolic or non-parabolic E(k) relationship

    1v

    E

    k

    =

    h

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    23 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Application to relativistic particles

    2 2 2 2 4 2 2 2 4

    0 0E c m c E c m c= + = +p p

    2

    2 2 2 4

    0

    E c

    c m c

    = = +

    p

    vp p

    2 2 2 4

    02

    1m c m c

    c= = +

    pp

    v

    Assume that a relativistic particle can be described by a

    wave packet with group velocity and mass defined as before

    ,

    /

    Em

    mE

    =

    =

    v p vp

    p p

    v p

    Then using relativistic dispersion relationship for a free particle

    Obtain

    2 4 2 2 2 4

    0m c c m c= +p

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    24 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    This leads to the relativistic mass for a free particle

    Application to relativistic particles

    Based on the above, obtain standard relativistic equationsfor velocity and mass of the particle

    2 2 2 2 2 2

    0m c m m c= +v

    0

    2 2

    0

    22

    ,

    11

    mc mm

    cm

    = =--

    v

    v

    2E mc=

    Note that we derived this result based on the unified mass

    definition and E(k) of the free relativistic particles

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    25 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Application to parabolic materials

    Assume that electron energy near conduction band

    minimum is described by one-dimensional, parabolic E(k)

    Therefore, in parabolic materials (and only in parabolic materials)

    mass is constant as a function of energy

    with a constant coefficient

    2 2

    *

    02

    C

    kE E

    m= +

    h

    *

    0m

    The effective mass is calculated as2

    *

    0/

    km m

    E k= =

    h

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    26 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    A problem with parabolic mass

    Writing Newton's second law

    Accounting for variable mass, which potentially depends on

    energy and momentum, obtain

    dpF

    dt=

    v vv

    dm mF m

    dt t t

    = = +

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    27 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    A problem with parabolic mass

    For a parabolic E(k), the mass is constant and F is approximated as

    We obtain the parabolic mass approximation,

    which is generally not valid!

    2

    2 2/

    mE k

    h

    Using the same definition of the group velocity

    1v

    E

    k

    =

    h

    vF m

    t

    We can approximate

    v m E m E k E pF m m

    t t k k k t k k t

    = = =

    h h

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    28 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Energy bands in real crystals

    Detailed E(k) relationship determines material properties

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    29 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Application to non-parabolic materials

    A simplified one-dimensional Kane approximation of electron kinetic

    energy in non-parabolic materials, such as HgCdTe, is written as

    E

    k

    2 2 2

    02G

    E kE

    E m

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    30 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Application to non-parabolic materials

    Obtain the effective mass, which is linearly dependent on energy

    This result was experimentally confirmed in non-parabolic materials

    1

    0

    11 2

    G

    E k E

    k m Ea

    - = = +

    vh

    h

    2

    01 2

    / G

    k Em m

    E k Ea

    = = +

    h

    Derive for the carrier velocity

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    31 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Electron velocity saturation

    Parabolic approximation is valid at low energies

    No velocity saturation for parabolic approximation

    GE E=

    2

    2 2

    0

    0 0

    2

    1 2

    G

    EE E

    E

    kE

    m

    E k E

    k m m

    a+

    =

    v

    h

    h

    h

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    32 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Electron velocity saturation

    At high energies

    Electron saturation velocity is a function of bandgap and

    carrier effective mass

    GE E?

    2 2

    2 2 2

    0

    0

    0

    2

    2

    1

    2

    G G

    G

    G

    G

    E EE

    E E

    E k

    E m

    EE km

    EE

    k m

    a a

    a

    a

    a

    +

    =

    v

    h

    h

    h

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    33 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Velocity saturation in real crystals

    Electron velocity is saturated with high applied voltage /

    electric field

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    34 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Advanced Materials - Graphene

    2D honeycomb crystal lattice Energy band structure

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    35 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1

    Application to graphene

    Assume particles with zero rest mass and with linear E(k)

    relationship similar to massless fermions in graphene

    around Dirac points

    - Fermi velocityvFvFE k:

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    Application to graphene

    The definition of the effective mass leads to

    The above result was confirmed by cyclotron resonance

    mass measurements in graphene

    Note that parabolic mass definition is not applicable for linear E(k)

    1v vF

    E

    k

    =

    :h

    Calculate carrier velocity

    2

    / vF

    kkm

    E k=

    h: