advsemi_lec01 2013_02_28
TRANSCRIPT
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Advanced
Semiconductor
Devices
Lecture 1
Advanced
Semiconductor
Devices
Lecture 1
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2 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Lecture outline
Semiconductor Industry Status
Semiconductor device history
Moore's law
Current industry trends portable devices
Semiconductor physics electron wave properties
Wave properties of matter
Silicon atom, crystal, and doping
Energy bands
Effective mass Mass definition
Relativistic particles
Application to non-parabolic materials
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3 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Basic electric switch/amplifier
Vacuum tubes: Radio (1904)
First semiconductor device patent: Julius E. Lilienfeld (1925)
Working transistor:
John Bardeen, Walter Brattain, William Shockley (1947)
Integrated circuit: Jack Kilby (1958)
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4 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
VLSI device structure
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6 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
PC to Portable Devices
IBM-PC (1981) vs Galaxy S3 (2012)
Weight 200: 1
Volume 1000:1 Cost 10:1
Clock 1:100
Price/Performance 1:1000
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Microprocessor to System-on-a-Chip Consumer demand
Smartphones
Digital cameras GPS devices
Digital televisions
Netbooks and Tablets
Shift to complex semiconductor devices - SOCs
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Moore's Law (CPU transistor count)
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Optical Properties of Si
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CMOS Imager - Camera-on-a-Chip
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Micro-ElectroMechanical Systems (MEMS)
Pico-projector (2005)
Motor
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Semiconductor industry leaders
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Wave properties of matter
Young double slit experiment
wave interference
Particle interference picture wave properties of matter
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Particle waves
De Broglie hypothesis
/ 2
E
p m k
w
pl
=
= = =v
h
h h
Standing waves quantum states
22
0
, 1, 2, 3.....
2n
nk na
nE
m a
p
p
= =
=
h
Group velocity / /dE dp d dk w= =v
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Particle waves 3d wave functions
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Silicon Atom
14 electrons occupying the 1st 3 energy levels:
1s, 2s, 2p orbitals filled by 10 electrons
3s, 3p orbitals filled by 4 electrons To minimize the overall energy, the 3s and 3p orbitals
hybridize to form 4 tetrahedral 3sp orbitals
Each has one electron and is capable of forming a bond
with a neighboring atom
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17 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Silicon crystal structure
Diamond Cubic Lattice
Each Si atom has 4 nearest neighbors
Lattice constant = 5.431
Si
Si SiSi
Si
Si
Si Si
Si Si
Si
Si
Si
Si
Si
Si
Si
Si Si
Si Si
Si
Si
Si
Si
Silicon atoms share valence electrons to
form insulator-like bonds.
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18 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Silicon crystal doping
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19 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Solution of wave equation energy bands
Use parabolic E(k) near band minimum/maximum
Model empty electron states at the top of the valence band
as positive electric charges with positive mass - holes
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20 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
A problem with effective mass
The following effective mass concepts are often applied to
semiconductor materials and devices Conductivity mass Density-of-states mass Hall mass Optical mass
Cyclotron mass
The traditional theoretical semiconductor effective mass
does not lead to correct theoretical and experimental results for non-parabolic E(k) such as electron mass in HgCdTe and graphene
2
2 2/
mE k
h
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21 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Definition of mass
Assume that there is a given dispersion relationship E(k), which has
wave solutions
Assume that waves can form wave-packets with the group velocity
defined as1
v Ek
= h
Here k is the wave-vector, related to the lattice momentum in solid-
state materials
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22 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Definition of mass
Lets assume that in semi-classical approximation we can identify
particles with wave-packets satisfying De Broglie relation
This leads to a unified theoretical definition of the effective mass
vp m k= = h
2
/
km
E k=
h
Sometimes, this definition is called the optical effective mass
However, we will demonstrate that this definition is quite general and
can be applied to any parabolic or non-parabolic E(k) relationship
1v
E
k
=
h
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Application to relativistic particles
2 2 2 2 4 2 2 2 4
0 0E c m c E c m c= + = +p p
2
2 2 2 4
0
E c
c m c
= = +
p
vp p
2 2 2 4
02
1m c m c
c= = +
pp
v
Assume that a relativistic particle can be described by a
wave packet with group velocity and mass defined as before
,
/
Em
mE
=
=
v p vp
p p
v p
Then using relativistic dispersion relationship for a free particle
Obtain
2 4 2 2 2 4
0m c c m c= +p
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This leads to the relativistic mass for a free particle
Application to relativistic particles
Based on the above, obtain standard relativistic equationsfor velocity and mass of the particle
2 2 2 2 2 2
0m c m m c= +v
0
2 2
0
22
,
11
mc mm
cm
= =--
v
v
2E mc=
Note that we derived this result based on the unified mass
definition and E(k) of the free relativistic particles
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25 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Application to parabolic materials
Assume that electron energy near conduction band
minimum is described by one-dimensional, parabolic E(k)
Therefore, in parabolic materials (and only in parabolic materials)
mass is constant as a function of energy
with a constant coefficient
2 2
*
02
C
kE E
m= +
h
*
0m
The effective mass is calculated as2
*
0/
km m
E k= =
h
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A problem with parabolic mass
Writing Newton's second law
Accounting for variable mass, which potentially depends on
energy and momentum, obtain
dpF
dt=
v vv
dm mF m
dt t t
= = +
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A problem with parabolic mass
For a parabolic E(k), the mass is constant and F is approximated as
We obtain the parabolic mass approximation,
which is generally not valid!
2
2 2/
mE k
h
Using the same definition of the group velocity
1v
E
k
=
h
vF m
t
We can approximate
v m E m E k E pF m m
t t k k k t k k t
= = =
h h
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28 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Energy bands in real crystals
Detailed E(k) relationship determines material properties
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29 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Application to non-parabolic materials
A simplified one-dimensional Kane approximation of electron kinetic
energy in non-parabolic materials, such as HgCdTe, is written as
E
k
2 2 2
02G
E kE
E m
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30 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Application to non-parabolic materials
Obtain the effective mass, which is linearly dependent on energy
This result was experimentally confirmed in non-parabolic materials
1
0
11 2
G
E k E
k m Ea
- = = +
vh
h
2
01 2
/ G
k Em m
E k Ea
= = +
h
Derive for the carrier velocity
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Electron velocity saturation
Parabolic approximation is valid at low energies
No velocity saturation for parabolic approximation
GE E=
2
2 2
0
0 0
2
1 2
G
EE E
E
kE
m
E k E
k m m
a+
=
v
h
h
h
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32 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Electron velocity saturation
At high energies
Electron saturation velocity is a function of bandgap and
carrier effective mass
GE E?
2 2
2 2 2
0
0
0
2
2
1
2
G G
G
G
G
E EE
E E
E k
E m
EE km
EE
k m
a a
a
a
a
+
=
v
h
h
h
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33 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Velocity saturation in real crystals
Electron velocity is saturated with high applied voltage /
electric field
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34 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Advanced Materials - Graphene
2D honeycomb crystal lattice Energy band structure
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35 V. Ariel 2013 Advanced Semiconductor Devices Lecture 1
Application to graphene
Assume particles with zero rest mass and with linear E(k)
relationship similar to massless fermions in graphene
around Dirac points
- Fermi velocityvFvFE k:
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Application to graphene
The definition of the effective mass leads to
The above result was confirmed by cyclotron resonance
mass measurements in graphene
Note that parabolic mass definition is not applicable for linear E(k)
1v vF
E
k
=
:h
Calculate carrier velocity
2
/ vF
kkm
E k=
h: