magneto-transport · spin hall effect (she) spin-orbit coupling: interaction between spin and...
TRANSCRIPT
Electronics
Intel4004CPU
Fairchildintegrated circuit
FirstTransistor
electronics:onlychargedegreeoffreedom
Spintronics /Spincurrents
Intel4004CPU
Fairchildintegrated circuit
FirstTransistor
Spin(elec)tronics:(only)spindegreeoffreedom
IBMGermanyÊverspin
Outline
5
VISHE
purespin currentsspin Halleffect
„simple“spin current circuitsspin pumping
spin Hallmagnetoresistance
Chargetransport inmagnetic fields- Halleffect,magnetoresistance
Literature: O‘Handley,ModernMagnetic Materials(2014)
Halleffectandmagneto-resistance
9
“normalmetal”:nolong-rangemagneticordermobilecarrierswithequaldensityofmobilespinupandspindowncarriers
Halleffectandmagneto-resistance
10
“normalmetal”:nolong-rangemagneticordermobilecarrierswithequaldensityofmobilespinupandspindowncarriers
OrdinaryHalleffect
12
boundarycondition1:opencircuitconditionalongy:Jc,y=0chargeaccumulationsteadystate:“Lorentzforce
compensatedbyHallelectricfield”
OrdinaryHalleffect
13
Þ foropentransverseBC,thelongitudinalresistanceisindependentofB!Ex
Ey
𝐸" = 𝐸%&'( = 𝜌*𝐽,
𝐸- = 𝐸./%%= 𝐸01/'2= 𝜌./%%𝐽,
Ordinary Halleffect
14
boundarycondition2:Ey=0shortcircuitconditiontransversecurrentflow
𝐸" = 𝐸%&'( ≈ 𝜌* 1 + 𝜃./%%7 𝐽,
𝜃./%% =𝜌./%%𝜌*
=𝑅.𝐵𝜌*
Þ Halleffectimpactslongitudinalresistance
Spincurrents- SpinHallphysics
Literature: Tserkovnyak,Rev.of Mod.Phys.77,1375(2005)Sinova,Rev.of Mod.Phys.87,1213(2015)M.Wu&A.Hoffmann(eds.),Recent Advances inMagnetic Insulators - From Spintronics toMicrowave Applications (Elsevier,2014)
Mott’stwocurrentmodel(twospinchannelmodel)
16
purechargecurrent
-Jc =J↑ + J↓ 𝐉s =ℏ 7⁄C (J↑- J↓)
purespincurrent
parallelmotionof and¯ electrons
anti-parallelmotionof and¯ electrons
SpinHalleffect (SHE)
spin-orbitcoupling:interactionbetweenspinandchargemotion…spin-orientationdependentscattering(skew/side-jump/intrinsic(Berryphase)mechanisms)
…actslikeaspin-orientationdependentHallmagneticfieldÞ scattered left,¯ scattered right
𝐉𝐬 = 𝛼FG ℏ2𝑒 𝐉𝐜×𝐬
JsspinHallangleaSHE=sS/sCparameterizesJC« JSconversionefficiency
SpinHalleffect:chargecurrentinducestransversespincurrent
SpinHalleffect (SHE)andinversespin Halleffect (ISHE)
18
𝐉𝐬 = 𝛼FG ℏ2𝑒 𝐉𝐜×𝐬
SpinHalleffect(SHE)
𝐉𝐜 = 𝛼FG 2𝑒ℏ 𝐉𝐬×𝐬
inversespinHalleffect(ISHE)
-Jc
spin-orbitcoupling:interactionbetweenspinandchargemotion…spin-orientationdependentscattering(skew/side-jump/intrinsic(Berryphase)mechanisms)
…actslikeaspin-orientationdependentHallmagneticfieldÞ scattered left,¯ scattered right
SpinHalleffect &boundary conditions
19
SpinHalleffect:chargecurrentinducestransversespincurrentviaSOC
𝐉𝐬 = 𝛼FG ℏ2𝑒 𝐉𝐜×𝐬
Js
SpinHalleffect &boundary conditions
spinboundarycondition1:openspincircuitalongy:Js,y=0spinaccumulationsteadystate:“spindependentscattering
compensatedbyspinchemicalpotential”
𝐉𝐬 = 𝛼FG ℏ2𝑒 𝐉𝐜×𝐬
Direct spin Halleffect inGaAs
21
Kerrmicroscopy(„spin imaging“)
Katoetal.,Science306, 1910(2004).
[ ]sJJ ´= CSHES 2e!a
-Jc
Js
Ä
4GaAsSHE 102 -´@a
ÄÄÄÄ
iSHE inMetallicF/NNanostructures
22
( )SFSHSHESHE /exp la LR -µD
4
C
SHESHE 101 -´@=
ssaAluminium:
Valenzuela&Tinkham,Nature442,176(2006).
detection ofdiffusive spin currentviainversespin Halleffect
Js
-Jc,ISHE
JsAl
FM1
LSH
Gold: aSHE=0.0016Platinum: aSHE=0.013…0.11 (0.16)Bi,Bi/Ag,Ta : aSHE=0.1…0.3
Valenzuela&Tinkham,Nature442,176(2006).Mosendz etal., Phys.Rev.Lett.104,046601(2010).Liuetal., Science 336,555(2012).Niimi etal., Phys.Rev.Lett.109,156602(2012).…andmanymore…M.Wu& A.Hoffmann(eds.),RecentAdvancesinMagneticInsulators- FromSpintronics toMicrowaveApplications(Elsevier,2014)
[ ]sJJ ´= sSHEISHEc
2!ea
-Jc,drive
SpinHalleffect &boundary conditions
23Þ spinHalleffectimpactslongitudinalresistance(=SMR)!
𝐸" ≈ 𝜌* 1 + 𝛼L.7 𝐽,
spinboundarycondition2:shortspincircuitalongy:µs,y=0transversespincurrentflow
wrap-up:
𝑗N = 𝑗N↑ + 𝑗N↓ ≠ 0
𝑗Q = Rℏ/7C 𝑗N↑+ Tℏ/7
C 𝑗N↓ = 0
𝑗N = 𝑗N↑ + 𝑗N↓ = 0
𝑗Q = Rℏ/7C 𝑗N↑+ Tℏ/7
C 𝑗N↓ ≠ 0
purecharge current purespin current
SHE:𝑗N → 𝑗Q
ISHE:𝑗Q → 𝑗N
Chargevs.SpinCurrents
24
Outline
25
VISHE
purespin currentsspin Halleffect
„simple“spin current circuitsspin pumping
spin Hallmagnetoresistance
Coherent magnetizationdynamics- (Anti-)ferromagnetic Resonance- Spinpumping (damping)- Spinpumping (electrically detected)
Literature: Vonsovskii,Ferromagnetic Resonance (1964)Tserkovnyak,Rev.of Mod.Phys.77,1375(2005)Sinova,Rev.of Mod.Phys.87,1213(2015)M.Wu&A.Hoffmann(eds.),Recent Advances inMagnetic Insulators - From Spintronics toMicrowave Applications (Elsevier,2014)
Heff
Coherent magnetization dynamics
27
F
M
ferromagnet (F)withmacroscopicmomentM
M
!+++++=
RFexchangeanistropydemag.
0eff
HHHHHH
Heff
29
ttdd
¶¶
´+´=MMHMM aµg eff0
driveoutofequilibrium,e.g.withmicrowaveradiation
Magnetization dynamics
Landau-Lifshitz equation(LL)
Heff
30
driveoutofequilibrium,e.g.withmicrowaveradiation
Magnetization dynamics
Gilbertdamping
ttdd
¶¶
´+´=MMHMM aµg eff0
Gilbertdamping
Resonance Frequency: Effects of Anisotropy
example:easyplaneanisotropy,calculate resonance frequencies
𝜃
Hext
resonator-based CWFMR
x xxx
xx
e1 h1 TE
resonatordimensions=n lMW /2resonatordeterminesMWfrequencyresonatorqualityQ>1000
® experiments@fixedMWfrequency® e1 andh1 spatiallyseparated
Bruker biospin
( )...100 ++´=¶¶ hHMM µgt
H0
FMRsignal® FMRresonancecondition:2pnMW =g Bres® realandimaginarypartofRFsusceptibility
RFsu
sceptib
ilityc
Bext – Bres (T)
Imc
Recµ0DH(FMRlinewidth)
( )...1ext0 ++´=¶¶ hHMM µgt
Hext
M MHext
M
(akaM
Wabsorption)
SpectraVector NetworkAnalyzer
V FMI
1
221 V
VS =
𝑆7[ = 𝑆7[* 1 − 𝑖𝜔𝜇*1
16𝑤𝑍*𝛿𝑙𝜒"" Shaw,Appl.Phys.Lett.105,062406(2014)
Quantitativeanalysisà mag.hf-susceptibility
Antiferromagnets
=
antiferromagnetic below TN ,Néel Temperature
antiferromagnet
two compensating sublattices
Hagiwara et.al.,J.Phys.:Condens.Matter 8(1996)7349–7354
H⊥H||
common antiferromagnets:• Cr• NiO• Fe2O3• MnF2
The Spin Flop Transition
Hext Hext>Hc
magnetic easyaxis
gain inZeemanenergy >loss inanisotropy energy
𝐻h = (𝐻j7+2𝐻j𝐻k)[/7
Antiferromagnetic Resonance
Keffer and Kittel, Physical Review 85, 329 (1952)
simultaneous precession of magnetisation of both sublattices
two sublatticesÞ two resonance
frequencies
Hext
effective field:
𝐇Cmm,o = 𝜆𝐌r + 𝐇C"s + 𝐇o
𝐇Cmm,r = 𝜆𝐌o + 𝐇C"s + 𝐇o
Ma
Mb
very higheffective fields,lM>100TpossibleÞ highfrequencies
MnF2: A prototypical antiferromagnet
miniSMPconnector
MnF2 crystal
coplanar waveguide:center line
andground plane
http://wwwchem.uwimona.edu.jm:1104/courses/mnf2J.html
Only easyaxis anisotropy
TN=67K
Bexchange=52T
Banisoptropy =0.8T Mn2+
F-
Hagiwara et.al.,J.Phys.:Condens.Matter 8(1996)7349–7354
Hext>Hc
spinflo
p MnF2
Bext
c-axis (easy)
q
I.S.Ja
cobs,J.A
ppl.Ph
ys.32,S61
(196
1).
Simulated Resonance Frequency
F/N+microwave photons =spin battery
resonantly driven magnetization inFrelaxesviathe emission ofaspin currentinto the adjacent Nlayer
spin pumping
Tserkovnyak,Phys.Rev.Lett.88,117601(2002).Brataas,Phys.Rev.B66,060404(2002).Tserkovnyak,Phys.Rev.B66,224403(2002).
suggested by Tserkovnyak,Brataas &Bauer,PRL(2002)
44
÷øö
çèæ ´==
dtdG
AmmIJ r
SS 4p
!
hpga
FsatSP
14 tM
Gr!
=inF:additionaldamping
inN:DCspincurrent Q= 2
MWcircS sin
2 rGJ n!
andACspincurrent…see
Gr:spinmixingconductance,units1/m2
nMW
D.Weietal.,NatureComm.5,1(2014)
F/N+microwave photons =spin battery
resonantly driven magnetization inFrelaxesviathe emission ofaspin currentinto the adjacent Nlayer
spin pumping
Tserkovnyak,Phys.Rev.Lett.88,117601(2002).Brataas,Phys.Rev.B66,060404(2002).Tserkovnyak,Phys.Rev.B66,224403(2002).
suggested by Tserkovnyak,Brataas &Bauer,PRL(2002)
45
÷øö
çèæ ´==
dtdG
AmmIJ r
SS 4p
!
hpga
FsatSP
14 tM
Gr!
=inF:additionaldamping
inN:DCspincurrent Q= 2
MWcircS sin
2 rGJ n!
andACspincurrent…see
Gr:spinmixingconductance,units1/m2
nMW
D.Weietal.,NatureComm.5,1(2014)
Spinpumpingasadampingmechanism
Pysat,Py
Au/PyPt/PySP
41
MtGr p
hgaaa!
=
-=
Gr =2.5´ 1019 m-2
M.Wu& A.Hoffmann(eds.),RecentAdvancesinMagneticInsulators- FromSpintronics toMicrowaveApplications(Elsevier,2014)
Au/Py
Pt/Py
dampingduetoSP
F/N+microwave photons =spin battery
resonantly driven magnetization inFrelaxesviathe emission ofaspin currentinto the adjacent Nlayer
spin pumping
Tserkovnyak,Phys.Rev.Lett.88,117601(2002).Brataas,Phys.Rev.B66,060404(2002).Tserkovnyak,Phys.Rev.B66,224403(2002).
suggested by Tserkovnyak,Brataas &Bauer,PRL(2002)
47
÷øö
çèæ ´==
dtdG
AmmIJ r
SS 4p
!
hpga
FsatSP
14 tM
Gr!
=inF:additionaldamping
inN:DCspincurrent Q= 2
MWcircS sin
2 rGJ n!
andACspincurrent…see
Gr:spinmixingconductance,units1/m2
nMW
D.Weietal.,NatureComm.5,1(2014)
Spinpumping with spin current detection
magnetization precession
FMR
inversespin Halleffect
DCcharge current Jc
DCspin current
microwave +DCmagnetic field
DCvoltage drop V
spin pumping
opencircuit
( ) Q= ¯ 2MWS sinRe
2gJ n!
( )[ ]sJeJ ˆ2 SSHISHEC ´=
!"
!a
Tserkovnyak etal.,Phys.Rev.Lett.88,117601(2002).Saitoh etal.,Appl.Phys.Lett.88,182509(2006)
Measurementsetupsampleholder
shielding
wires
fusedsilicatube
sample
5mm
TypicalsampledimensionsL´W´ t=3mm´ 1mm´ (10nm/10nm)
Ni/Pt
FMR
(arb
.u.)
T=290K
f=0°
0 50 100 150 200 250 300 350
-4
-2
0
2
4
V DC (µ
V)
µ0H (mT)
Ni/Pt
7nmPt10nmNi
Ni/Pt
FMR
(arb
.u.)
T=290K
f=180°
0 50 100 150 200 250 300 350
-4
-2
0
2
4
V DC (µ
V)
µ0H (mT)
FMR
(arb
.u.)
T=290K
f=0°
0 50 100 150 200 250 300 350
-4
-2
0
2
4
V DC (µ
V)
µ0H (mT)
Ni/Pt Ni/Pt
7nmPt10nmNi
Ni/Pt
FMR
(arb
.u.)
T=290K
f=180°
0 50 100 150 200 250 300 350
-4
-2
0
2
4
V DC (µ
V)
µ0H (mT)
FMR
(arb
.u.)
T=290K
f=90°
450 500 550 600 650 700 750
-4
-2
0
2
4
V DC (µ
V)µ0H (mT)
FMR
(arb
.u.)
T=290K
f=0°
0 50 100 150 200 250 300 350
-4
-2
0
2
4
V DC (µ
V)
µ0H (mT)
Ni/Pt Ni/Pt Ni/Pt
7nmPt10nmNi
0 100 200 300-0.3-0.2-0.10.00.10.20.3
100 200 300-0.8
-0.4
0.0
0.4
0.8
0 150 300-4
-2
0
2
4
0 50 100-40
-20
0
20
40
0 25 50 75-40
-20
0
20
40
25 50 75 100-80
-40
0
40
80
100 200 300-6-4-20246
125 250 375-15-10-505
1015
Fe3O4 (i)(111)
FMR
Hres
290K
V DC (µ
V)
µ0H (mT)
(j)
(k) Fe3O4(100)
Hres
290K
(l)
µ0H (mT)
(arb
.u.)
(arb
.u.)
FMR
(a) Ni
0°180° Hres
290K
µ0H (mT)
VD
C (µ
V)
(b)
Co(e)
Hres
290K
µ0H (mT)
(f)
2Co FeSi(g)
Hres
290K
µ0H (mT)
(h)
(c) Fe
Hres
290K
µ0H (mT)
(d)
75nmDMS(m)
Hres
10K
µ0H (mT)
(n)
200nmDMS(o)
Hres
10K
(p)
µ0H (mT)
Differentmaterials
works formany differentF/platinumbilayers
samesign ofVDCfor f=0°for allbilayers
notMWrectification[MW-inducedJc(t)´m(t)® VDC]butspin pumping!Similar spin-mixingconductance for allsystems
Czeschka,Phys.Rev.Lett 107,046601(2011)
Spinpumping inMnF2
Mainspin pumpingsignal notduetospin pumping
Smalldifference signalindicates spin currentinjected into Pt
difference signal under field inversion
Ross, J. Appl. Phys., 118 233907 (2015)
SpinHallmagnetoresistance- SpinHallmagnetoresistance
Literature: Sinova,Rev.of Mod.Phys.87,1213(2015)Nakayama,Phys.Rev.Lett.110,206601(2013)Althammer,Phys.Rev.B 87,224401(2013)Chen,Phys.Rev.B87,144411(2013)Vlietstra Phys.Rev.B87,184421(2013)....
SMRmechanism
Pt
YIG
Jc
if 𝜏Lvv ∝ 𝐌× 𝐌×𝐬 isfinite
M
enhanceddissipationinPt→largerPtresistance
→outflowofJs intoYIG
Js,YIG
Js
s
𝐉𝐬 = 𝛼L.tℏ2𝑒 𝐉𝐜×𝐬
electron spin accumulation inPtwith spin s
SMRmechanism
Pt
YIG
Jc
M
enhanceddissipationinPt→largerPtresistance
→outflowofJs intoYIG
Js
sJc
Js,backJs
s
M
Js,YIG
𝜏Lvv ∝ 𝐌× 𝐌×𝐬 = 0
reduceddissipation→smallerPtresistance
→openboundaryconditionsforJs
if 𝜏Lvv ∝ 𝐌× 𝐌×𝐬 isfinite
SMRmechanism
Pt
YIG
Jc
M
Js
s
Js,YIG
𝑅 = 𝑅* − 𝑅[ 𝐦 y 𝐬 7
= 𝑅* − 𝑅[cos7(𝛼)
JcJs,backJs
s
M
PRL 110,206601(2013)
SpinHallMR(SMR):R smallest forM||s,largerotherwise
SMRmechanism
Pt
YIG
Jc
M
Js
s
Js,YIG
𝑅 = 𝑅* − 𝑅[ 𝐦 y 𝐬 7
= 𝑅* − 𝑅[cos7(𝛼)
JcJs,backJs
s
M
PRL 110,206601(2013)
SpinHallMR(SMR):R smallest forM||s,largerotherwise
64
Measuring resistance
IRl
Rl
V
Leadresistanceinfluences results
4wire methodprobes device physics
R =V
I
Measuring resistance — switching techniques
IRl
Rl
V
Schreieretal.,Appl.Phys.Lett.103,242404(2013)
Vres(I) =1
2(V (+I)� V (�I))
Vtherm(I) =1
2(V (+I) + V (�I))
Contains allodd terms inI:à resistive effects
Contains alleven terms inI:à thermaleffects
R =V
I
SMRfingerprint
H||j H||t
SpinHallMR(SMR):Rsmallest forM‖s(viz.M‖t) ,largerotherwise
SMRamplitude: Δ𝑅/𝑅 ≅ 4×10T~
Js
Jc
s
H||n H||t H||n H||j
Extraction of spin Hall angle from SMRYIG/Pt@WMI YIG/Pt@IMR
Ptthickness dependenceà spin Hallangleand spin diffusion length inPt
YIG/Pt @Huangetal.,PRL,109,107204(2012)
spinmixingconductance:𝑔↑↓=1x1019 m-2
−𝜌[𝜌*
=𝛼L.7 2𝜆�07 𝜌�0
𝑔↑↓𝑡�0
tanh7 𝑡�02𝜆�0
1 + 2𝜆�0𝜌�0𝑔↑↓coth𝑡�0𝜆�0
SpinHallmagneto-resistance:ü MRin(nonmagnetic)Pt,governed
byM ininsulatingYIGü “simple”measurementofspinHall
transportparametersü electricaldetectionofM inFMI
Acknowledgements“Magnetiker”
SebastianT.B.Goennenwein
RudolfGrossMatthiasAlthammerMathiasWeilerStephanGeprägsKathrinGanzhornStefanKlinglerMatthiasPernpeintnerRichardSchlitzTobiasWimmerSybilleMeyerHannesMaier-FlaigFranzCzeschkaAndreasBrandlmayer